Panasonic PNZ150L Datasheet
Phototransistors
PNZ150L
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Wide spectral sensitivity, suited for detecting GaAs LEDs
Low dark current
Small size, thin side-view type package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
C
P
C
T
opr
stg
20 V
20 mA
100 mW
–25 to +85 ˚C
–30 to +100 ˚C
4.8±0.3
ø3.5±0.2
2.4
2.414.52.2
42.7±1.0
4.5±0.3 4.2±0.3
Not soldered
2-1.12
1.0
2.95
12
2.54
2-0.45±0.15
2-0.6±0.15
2-0.45±0.15
R1.75
0.4±0.15
Unit : mm
1.92.3
1.2
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Sensitivity to infrared emitters
Collector saturation voltage
Peak sensitivity wavelength
CEO
S
V
CE(sat)VCE
λ
Response time tr, t
Acceptance half angle θ
*1
Measurements were made using infrared light (λ = 940 nm) as a light source.
*2
Response time measurement circuit
Sig.IN
50Ω R
V
CC
Sig.OUT 10%
L
(Input pulse)
(Output pulse)
V
= 10V 0.01 0.2 µA
CEO
*1
VCE = 10V, H = 15µW/cm
IR
= 10V, H = 15µW/cm
V
P
*2
f
= 10V 800 nm
CEO
VCC = 10V, I
= 5mA, RL = 100Ω 4 µs
CE(L)
Measured from the optical axis to the half power point
90%
t
d
t
r
t
f
2
2
16 µA
0.2 0.5 V
35 deg.
td : Delay time
: Rise time (Time required for the collector photo current to
t
r
increase from 10% to 90% of its final value)
: Fall time (Time required for the collector photo current to
t
f
decrease from 90% to 10% of its initial value)
1
Phototransistors PNZ150L
P
— Ta
120
100
(mW)
C
80
60
40
20
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
2
10
CE(L)
(mA)
CE(L)
10
VCE = 10V
T = 2856K
L = 1000 lx
500 lx
I
— V
20
16
(mA)
CE(L)
12
L = 2000 lx
8
4
Collector photo current I
0
02016812424
CE(L)
1750 lx
CE
Ta = 25˚C
T = 2856K
1500 lx
1250 lx
1000 lx
750 lx
500 lx
250 lx
100 lx
VCE = 10V
2
10
Ta = 25˚C
T = 2856K
10
(mA)
CE(L)
1
–1
10
–2
10
Collector photo current I
–3
10
1
Collector to emitter voltage VCE (V)
I
— Ta
10
1
CEO
VCE = 10V
(µA)
CEO
–1
10
Spectral sensitivity characteristics
100
V
CE
Ta = 25˚C
80
60
40
I
— L
CE(L)
3
10 10
2
10
4
10
Illuminance L (lx)
= 10V
Collector photo current I
1
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative sensitivity S (%)
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
–2
Dark current I
10
–3
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
t
— I
r
CE(L)
4
10
3
10
(µs)
r
2
10
10
Rise time t
1
–1
10
–1
–2
10
Collector photo current I
VCC = 10V
Ta = 25˚C
RL = 1kΩ
10 10
110
CE(L)
500Ω
100Ω
(mA)
Relative sensitivity S (%)
20
0
200
4
10
3
10
(µs)
2
f
10
10
Fall time t
1
–1
10
2
–2
Collector photo current I
400 600 800 1000 1200
Wavelength λ (nm)
t
— I
f
CE(L)
VCC = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
–1
10
10 10
110
CE(L)
(mA)
2
2
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