Panasonic PNZ1270 Datasheet
Phototransistors
PNZ1270
Silicon NPN Phototransistor
For optical control systems
Features
High sensitivity
Good collector photo current linearity with respect to optical
power input
Fast response : tr = 2.5 µs (typ.)
Small size designed for easier mounting to printed circuit board
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Emitter to collector voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
V
ECO
C
P
C
T
opr
stg
20 V
5V
20 mA
50 mW
–25 to +85 ˚C
–30 to +100 ˚C
Unit : mm
Type number : Emitter mark (Blue)
10.0 min.
3.2±0.3
ø1.8
0.5±0.1
12
45˚
1.05±0.10.85 ± 0.15
2.8±0.2
(0.7)
1.8
2.8±0.2
10.0 min.
3.2±0.3
R0.9
1.8
(0.7)
0.4±0.1
2.2±0.15
0.15
1: Collector
2: Emitter
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Collector photo current I
Peak sensitivity wavelength
CEO
CE(L)
λ
Acceptance half angle θ
Rise time t
Fall time t
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
50Ω R
*3
I
Classifications
CE(L)
Class Q R S T
I
(mA) 0.8 to 2.4 1.6 to 4.8 3.2 to 9.6 6.4 to 19.2
CE(L)
V
CC
Sig.OUT 10%
L
(Input pulse)
(Output pulse)
VCE = 10V 1 100 nA
*3
VCE = 10V, L = 1000 lx
VCE = 10V 800 nm
P
*1
Measured from the optical axis to the half power point
*2
r
*2
f
VCC = 10V, I
t
d
t
r
= 1mA, RL = 100Ω
CE(L)
td : Delay time
: Rise time (Time required for the collector photo current to
t
90%
r
increase from 10% to 90% of its final value)
: Fall time (Time required for the collector photo current to
t
t
f
f
decrease from 90% to 10% of its initial value)
0.8 19.2 mA
14 deg.
2.5 µs
3.5 µs
1
Phototransistors PNZ1270
P
— Ta
60
50
(mW)
C
40
30
20
10
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
3
10
2
10
CEO
VCE = 10V
(nA)
CEO
10
Dark current I
1
I
— V
5
4
(mA)
CE(L)
3
2
1
Collector photo current I
0
02016812424
CE(L)
CE
Ta = 25˚C
T = 2856K
L =1000 lx
500 lx
250 lx
100 lx
5
10
4
(µA)
10
CE(L)
3
10
2
10
Collector photo current I
10
10
Collector to emitter voltage VCE (V)
Spectral sensitivity characteristics
100
V
CE
Ta = 25˚C
80
60
40
Relative sensitivity S (%)
20
10
(mA)
10
CE(L)
10
I
— Ta
5
4
3
CE(L)
VCE = 10V
T = 2856K
Collector photo current I
I
CE(L)
2
10
Illuminance L (lx)
= 10V
— L
3
10
V
= 10V
CE
Ta = 25˚C
T = 2856K
4
10
–1
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative sensitivity S (%)
20
2
30˚
40˚
50˚
60˚
70˚
80˚
90˚
2
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
t
— I
r
2
10
10
(µs)
r
1
CE(L)
VCE = 10V
Ta = 25˚C
RL = 1kΩ
Rise time t
–1
10
–2
10
–2
10
Collector photo current I
–1
10
110
CE(L)
500Ω
100Ω
(mA)
0
400 600 800 1000 1200
200
Wavelength λ (nm)
t
2
10
10
(µs)
f
1
Fall time t
–1
10
–2
10
–2
10
10
Collector photo current I
f
–1
— I
CE(L)
110
VCE = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
(mA)
CE(L)
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