Panasonic PNZ123S Datasheet

Phototransistors

PNZ123S

Silicon NPN Phototransistor

For optical control systems
Can be combined with LN62S to form an photo interrupter

ø3.0±0.2

Unit : mm

Features

High sensitivity
Low dark current
Fast response : tr = 3.5 µs (typ.)
Small size (ø 3) ceramic package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Collector to emitter voltage
Emitter to collector voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T

V

CEO

V

ECO

C

P

C

T

opr

stg

20 V

5V
10 mA
50 mW

–25 to +85 ˚C

–30 to +100 ˚C

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Dark current I
Collector photo current I
Peak sensitivity wavelength

CEO

CE(L)

λ

Acceptance half angle θ
Rise time t
Fall time t

*1

Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

*2

Switching time measurement circuit

Sig.IN

50Ω R

V

CC

Sig.OUT 10%

L

(Input pulse)

(Output pulse)

VCE = 10V 1 100 nA
VCE = 10V, L = 1000 lx
VCE = 10V 800 nm

P

*1

Measured from the optical axis to the half power point

*2

r

*2

f

VCC = 10V, I

t

d

t

r

= 1mA, RL = 100Ω

CE(L)

td : Delay time

: Rise time (Time required for the collector photo current to

t

90%

r

increase from 10% to 90% of its final value)

: Fall time (Time required for the collector photo current to

t

t

f

f

decrease from 90% to 10% of its initial value)

4.1±0.3

2.0±0.2

12.5 min.

ø0.3±0.05
ø0.45±0.05

0.9±0.15

1

2

1: Emitter
2: Collector

400 700 µA

30 deg.

3.5 µs
5 µs

1

Phototransistors PNZ123S

P

— Ta

60

50

(mW)

C

40

30

20

10

Collector power dissipation P

0
– 20

C

0 20406080100

Ambient temperature Ta (˚C )

I

— Ta

3

10

2

10

CEO

VCE = 10V

(nA)

CEO

10

I

— V

1600

(µA)

1200

CE(L)

800

400

Collector photo current I

0

02016812424

CE(L)

CE

Ta = 25˚C
T = 2856K

L =2000 lx

1750 lx

1500 lx

1250 lx

1000 lx

750 lx
500 lx
250 lx

4

10

3

(µA)

10

CE(L)

2

10

10

Collector photo current I

1

10

Collector to emitter voltage VCE (V)

Spectral sensitivity characteristics

100

VCE = 10V
Ta = 25˚C

80

60

40

(µA)

10

CE(L)

10

I

— Ta

4

3

CE(L)

VCE = 10V
T = 2856K

L = 1500 lx

1000 lx

I

— L

CE(L)

2

10

3

10

Illuminance L (lx)

V

= 10V

CE

Ta = 25˚C
T = 2856K

4

10

Dark current I

1

–1

10

– 20 0 40 8020 60 100

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚

100

90
80
70
60
50
40
30

Relative sensitivity S (%)

20

Collector photo current I

2

10

– 20 0 40 8020 60 100

Ambient temperature Ta (˚C )

3

10

30˚

40˚

50˚

60˚
70˚

80˚
90˚

2

10

(µs)

r

10

Rise time t

1

–1

10

–2

10

Collector photo current I

Relative sensitivity S (%)

20

0

400 600 800 1000 1200

200

Wavelength λ (nm)

t

— I

r

CE(L)

VCC = 10V
Ta = 25˚C

RL = 1kΩ

500Ω

100Ω

–1

10

110

(mA)

CE(L)

3

10

2

10

(µs)

f

10

Fall time t

1

–1

10

–2

10

Collector photo current I

t

— I

f

CE(L)

VCC = 10V
Ta = 25˚C

RL = 1kΩ

500Ω

100Ω

–1

10

110

(mA)

CE(L)

2