Panasonic PNZ121S Datasheet
Phototransistors
PNZ121S
Silicon NPN Phototransistor
For optical control systems
ø3.0±0.2
Unit : mm
Features
Stable operations in high illuminance region
Low dark current
Fast response : tr = 1 µs (typ.)
Small size (ø 3) ceramic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Emitter to collector voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
V
ECO
C
P
C
T
opr
stg
20 V
5V
10 mA
50 mW
–25 to +85 ˚C
–30 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Collector photo current I
Peak sensitivity wavelength
CEO
CE(L)
λ
Acceptance half angle θ
Rise time t
Fall time t
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
50Ω R
V
CC
Sig.OUT 10%
L
(Input pulse)
(Output pulse)
VCE = 10V 1 100 nA
*3
VCE = 10V, L = 1000 lx
VCE = 10V 800 nm
P
*1
Measured from the optical axis to the half power point
*2
r
*2
f
VCC = 10V, I
t
d
t
r
= 1mA, RL = 100Ω
CE(L)
td : Delay time
: Rise time (Time required for the collector photo current to
t
90%
r
increase from 10% to 90% of its final value)
: Fall time (Time required for the collector photo current to
t
t
f
f
decrease from 90% to 10% of its initial value)
4.1±0.3
2.0±0.2
12.5 min.
ø0.3±0.05
ø0.45±0.05
0.9±0.15
1
2
1: Emitter
2: Collector
120 280 µA
30 deg.
1 µs
1.3 µs
*3
I
Classifications
CE(L)
Class Q R S T
I
(µA) 120 to180 160 to 200 180 to 235 210 to 280
CE(L)
Color indication Black Red Green —
1
Phototransistors PNZ121S
P
— Ta
60
50
(mW)
C
40
30
20
10
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
3
10
2
10
CEO
VCE = 10V
(nA)
CEO
10
I
— V
600
500
(µA)
CE(L)
400
300
200
100
Collector photo current I
0
02016812424
CE(L)
CE
Ta = 25˚C
T = 2856K
L =2000 lx
1750 lx
1500 lx
1250 lx
1000 lx
750 lx
500 lx
250 lx
4
10
3
(µA)
10
CE(L)
2
10
10
Collector photo current I
1
10
Collector to emitter voltage VCE (V)
Spectral sensitivity characteristics
100
V
CE
Ta = 25˚C
80
60
40
(µA)
10
CE(L)
10
I
— Ta
3
2
CE(L)
L = 1500 lx
VCE = 10V
T = 2856K
1000 lx
I
CE(L)
2
10
Illuminance L (lx)
= 10V
— L
3
10
V
= 10V
CE
Ta = 25˚C
T = 2856K
4
10
Dark current I
1
–1
10
– 20 0 40 8020 60 100
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative sensitivity S (%)
20
Collector photo current I
10
– 20 0 40 8020 60 100
Ambient temperature Ta (˚C )
2
10
30˚
10
(µs)
r
40˚
50˚
60˚
70˚
80˚
90˚
1
Rise time t
–1
10
–2
10
–2
10
Collector photo current I
Relative sensitivity S (%)
20
0
400 600 800 1000 1200
200
Wavelength λ (nm)
t
— I
r
500Ω
CE(L)
VCC = 10V
Ta = 25˚C
RL = 1kΩ
100Ω
2
10
10
(µs)
f
1
t
f
— I
CE(L)
500Ω
VCC = 10V
Ta = 25˚C
RL = 1kΩ
100Ω
Fall time t
–1
10
–2
–1
10
110
(mA)
CE(L)
10
–2
10
–1
10
Collector photo current I
110
(mA)
CE(L)
2
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