Panasonic PNA2W01M Datasheet
Darlington Phototransistors
PNA2W01M
Darlington Phototransistor
For optical control systems
■ Features
• High sensitivity
• Easy to combine with red and infrared light emitting diodes
• Small size designed for easier mounting to printed circuit board
Unit: mm
Type number : Emitter mark (Black)
10.0 min.
3.2±0.3
φ1.8
0.5±0.1
12
°
45
(0.7)
1.8
2.8±0.2
3.2±0.3
10.0 min.
1.8
2.2±0.15
(0.7)
0.4±0.1
R0.9
■ Absolute Maximum Ratings Ta = 25°C
1.05±0.10.85±0.15
2.8±0.2
Parameter Symbol Rating Unit
Collector to emitter voltage V
Emitter to collector voltage V
Collector current I
Collector power dissipation P
Operating ambient temperature T
Storage temperature T
CEO
ECO
C
C
opr
stg
20 V
5V
30 mA
100 mW
−25 to +85 °C
−30 to +100 °C
1: Collector
2: Emitter
■ Electro-Optical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Dark current I
Collector photo current I
Peak sensitivity wavelength λ
CEO
CE(L)
P
Acceptance half angle θ Measured from the optical axis to the 18 °
Response time tr , tf
Collector saturation voltage V
CE(sat)
Note)*1: Measurements were made using a tungsten lamp (color temperature T = 2856 K) as a light source.
2: Switching time measurement circuit
*
Sig. in
50 Ω
V
CC
R
L
(Input pulse)
Sig. out 10%
(Output pulse)
VCE = 10 V 0.1 0.5 µA
1
VCE = 10 V, L = 2 lx
*
0.5 3 mA
VCE = 10 V 800 nm
half power point
2
*
VCC = 10 V, I
I
= 1 mA, L = 100 lx
CE(L)
t
d
t
r
= 5 mA, RL = 100 Ω 200 µs
CE(L)
t
f
90%
1
*
td : Delay time
: Rise time (Time required for the collector photo current to
t
r
increase from 10% to 90% of its final value)
:
Fall time (Time required for the collector photo current to
t
f
decrease from 90% to 10% of its initial value)
0.7 1.5 V
0.15
1
PNA2W01M Darlington Phototransistors
PC T
120
100
(mW)
C
80
60
40
20
Collector power dissipation P
0
−20
0 20406080100
Ambient temperature Ta (°C)
I
T
2
10
V
CE
10
(µA)
1
CEO
CEO
= 10 V
I
a
32
24
(mA)
CE(L)
16
8
Collector photo current I
0
0
V
CE(L)
CE
T
= 25°C
a
T = 2 856 K
PC = 100 mW
L = 10 lx
5 lx
2 lx
1 lx
8124162024
3
10
2
10
(mA)
CE(L)
10
1
Collector photo current I
−1
10
1
Collector to emitter voltage VCE (V)
I
a
2
10
CE(L)
T
a
V
= 10 V
CE
T = 2 856 K
(mA)
10
CE(L)
Spectral sensitivity characterisitics
100
V
T
80
60
I
CE(L)
10 10
Illuminance L (lx)
= 10 V
CE
= 25°C
a
L
V
CE
= 25°C
T
a
T = 2 856 K
2
10
= 10 V
3
−1
10
Dark current I
−2
10
−3
10
−20
04020 8060 100
Ambient temperature Ta (°C)
Directivity characteristics
0° 10° 20°
100
90
80
70
60
50
40
30
Relarive sensitivity ∆S (%)
20
1
Collector photo current I
−1
10
−40
5
10
30°
40°
50°
60°
70°
4
10
(µs)
r
3
10
Rise time t
2
10
80°
90°
10
−2
10
Collector photo current I
0 40 80 120
Ambient temperature Ta (°C)
tr I
CE(L)
= 10 V
V
CC
= 25°C
T
a
RL = 1 kΩ
−1
10
110
(mA)
CE(L)
500 Ω
100 Ω
40
Relarive sensitivity ∆S (%)Fall time t
20
0
200
400 600 800 1 000 1 200
Wavelength λ (nm)
5
10
4
10
(µs)
f
3
10
2
10
10
−2
10
Collector photo current I
tf I
−1
10
CE(L)
1
V
T
CE(L)
= 10 V
CC
= 25°C
a
RL = 1 kΩ
500 Ω
100 Ω
(mA)
10
2
Loading...