Panasonic PNA2803M Datasheet
Darlington Phototransistors
PNA2803M
Darlington Phototransistor
For optical control systems
Features
Darlington output, high sensitivity
Easy to combine with red and infrared light emitting diodes
ø 3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Emitter to collector voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
V
ECO
C
P
C
T
opr
stg
20 V
5V
30 mA
100 mW
–25 to +80 ˚C
–30 to +100 ˚C
5.0±0.2
15.0±1.0
(1.5)
4.5±0.3 0.61.0
1.7
ø3.8±0.2
ø3.0±0.2
1
2.54
Not soldered 2.0 max.
2-0.8 max.
2-0.5±0.1
2
0.5±0.1
Unit : mm
1: Emitter
2: Collector
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Collector photo current I
CEO
CE(L)
Peak sensitivity wavelength
Acceptance half angle θ
Response time tr, t
Collector saturation voltage
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
Sig.IN
50Ω
*3
I
Classifications
CE(L)
Class Q R S
I
(mA) 0.05 to 0.25 0.18 to 0.8 0.7 to 1.5
CE(L)
V
CC
R
L
Sig.OUT
V
CE(sat)ICE(L)
(Input pulse)
(Output pulse)
VCE = 10V 0.5 µA
*3
VCE = 10V, L = 2 lx
λ
VCE = 10V 850 nm
P
*1
0.05 1.5 mA
Measured from the optical axis to the half power point
*2
f
VCC = 10V, I
= 1mA, L = 100 lx
t
d
t
r
= 1mA, RL = 100Ω 150 µs
CE(L)
t
f
*1
t
: Delay time
d
: Rise time (Time required for the collector photo current to
t
90%
r
increase from 10% to 90% of its final value)
10%
: Fall time (Time required for the collector photo current to
t
f
decrease from 90% to 10% of its initial value)
30 deg.
0.7 1.5 V
1
PNA2083M Darlington Phototransistors
P
— Ta
120
100
(mW)
C
80
60
40
20
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
10
CE(L)
(mA)
CE(L)
1
VCE = 10V
I
— V
24
20
(mA)
16
CE(L)
CE(L)
12
8
4
Collector photo current I
0
PC = 100mW
L = 20 lx
02016812424
10 lx
CE
Ta = 25˚C
T = 2856K
5 lx
2 lx
1 lx
3
10
VCE = 10V
Ta = 25˚C
T = 2856K
2
(mA)
10
CE(L)
10
1
Collector photo current I
-1
10
-1
10
Collector to emitter voltage VCE (V)
I
— Ta
2
10
10
CEO
VCE = 10V
(µA)
CEO
1
Spectral sensitivity characteristics
100
80
60
40
I
— L
CE(L)
11010
2
Illuminance L (lx)
V
= 10V
CE
Ta = 25˚C
Collector photo current I
–1
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative sensitivity S (%)
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
–1
Dark current I
10
–2
10
– 20 0 40 8020 60 100
Ambient temperature Ta (˚C )
t
— I
r
CE(L)
Sig.IN
Sig.
OUT
50Ω
(µs)
r
3
10
V
CC
Sig.
OUT
t
R
d
L
t
r
RL = 1kΩ
Rise time t
2
10
VCC = 10V
10
–2
10
–1
10
Collector photo current I
Ta = 25˚C
110
CE(L)
90%
10%
t
f
500Ω
100Ω
(mA)
Relative sensitivity S (%)
20
0
700 800 900 1000 1100 1200
600
Wavelength λ (nm)
t
— I
f
Sig.IN
Sig.
OUT
50Ω
(µs)
f
3
10
V
CC
Sig.
OUT
R
L
Fall time t
2
10
10
–2
10
–1
10
Collector photo current I
CE(L)
90%
10%
t
d
t
t
r
f
RL = 1kΩ
500Ω
100Ω
VCC = 10V
Ta = 25˚C
110
(mA)
CE(L)
2
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