Panasonic PNA2602 Datasheet
Darlington Phototransistors
PNA2602
Darlington Phototransistor
For optical control systems
ø3.5±0.2
4.5±0.3
Unit : mm
4.2±0.3
2.3 1.9
Features
4.8±0.3
Darlington output, high sensitivity
Easy to combine light emission and photodetection on same
printed circuit board
Small size, thin side-view type package
2.4 2.4
2.8
12.8 min.
10.0 min.
1.8
R1.75
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Collector to emitter voltage
Emitter to collector voltage
Collector current I
Collector power dissipation
Operating ambient temperature
Storage temperature T
V
CEO
V
ECO
C
P
C
T
opr
stg
20 V
5V
30 mA
100 mW
–25 to +80 ˚C
–30 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Dark current I
Collector photo current I
CEO
CE(L)
Peak sensitivity wavelength
Acceptance half angle θ
Response time tr, t
Collector saturation voltage
*1
Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2
Switching time measurement circuit
V
CE(sat)ICE(L)
VCE = 10V 0.1 0.5 µA
VCE = 10V, L = 2 lx
λ
VCE = 10V 800 nm
P
*1
Measured from the optical axis to the half power point
*2
f
VCC = 10V, I
= 1mA, L = 100 lx
= 5mA, RL = 100Ω 100 µs
CE(L)
*1
Not soldered
1.0
2.54
12
2-0.98±0.2
2-0.45±0.15
0.45±0.15
1: Emitter
2: Collector
1.2
0.2 1 mA
35 deg.
0.7 1.5 V
50Ω
Sig.IN
V
CC
R
L
Sig.OUT
(Input pulse)
(Output pulse)
t
: Delay time
d
: Rise time (Time required for the collector photo current to
t
90%
r
increase from 10% to 90% of its final value)
t
d
t
r
10%
: Fall time (Time required for the collector photo current to
t
t
f
f
decrease from 90% to 10% of its initial value)
1
PNA2602 Darlington Phototransistors
P
— Ta
120
100
(mW)
C
80
60
40
20
Collector power dissipation P
0
– 20
C
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
10
CE(L)
(mA)
1
CE(L)
= 10V
V
CE
T = 2856K
I
— V
32
(mA)
24
CE(L)
16
PC = 100mW
L = 30 lx
20 lx
8
Collector photo current I
0
02016812424
CE(L)
10 lx
CE
Ta = 25˚C
T = 2856K
5 lx
2 lx
1 lx
3
10
2
(mA)
10
CE(L)
10
1
Collector photo current I
–1
10
1
Collector to emitter voltage VCE (V)
I
— Ta
2
10
10
(µA)
1
CEO
CEO
VCE = 10V
Spectral sensitivity characteristics
100
Ta = 25˚C
80
60
I
— L
CE(L)
10 10
2
Illuminance L (lx)
V
= 10V
CE
Ta = 25˚C
T = 2856K
3
10
–1
10
Collector photo current I
–2
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
Relative sensitivity S (%)
30
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
–1
10
Dark current I
–2
10
–3
10
– 20 0 40 8020 60 100
Ambient temperature Ta (˚C )
t
— I
r
CE(L)
Sig.IN
Sig.
OUT
50Ω
(µs)
r
3
10
V
CC
Sig.
OUT
t
R
d
L
t
r
RL = 1kΩ
Rise time t
2
10
VCC = 10V
10
–2
10
–1
10
Collector photo current I
Ta = 25˚C
110
CE(L)
90%
10%
t
f
500Ω
100Ω
(mA)
40
Relative sensitivity S (%)
20
0
400 600 800 1000 1200
200
Wavelength λ (nm)
t
— I
f
V
Sig.IN
Sig.
OUT
50Ω
(µs)
f
3
10
CC
Sig.
OUT
R
L
Fall time t
2
10
10
–2
10
–1
10
Collector photo current I
CE(L)
90%
10%
t
d
t
t
r
f
RL = 1kΩ
500Ω
100Ω
VCC = 10V
Ta = 25˚C
110
(mA)
CE(L)
2
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