Panasonic PNA1803L User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
50 Ω
R
L
V
CC
Sig. out 10%
90%
Sig. in
t
r
t
f
(Input pulse)
(Output pulse)
tr : Rise time
t
f
: Fall time
Phototransistors
PNA1803L
Silicon planar type
For optical control systems
Features
Fast response
Wide spectral sensitivity characteristics
φ3 plastic package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-emitter voltage (Base open) V
Emitter-collector voltage (Base open) V
Collector current I
Collector power dissipation
*
Operating ambient temperature T
Storage temperature T
CEO
ECO
P
opr
stg
C
C
20 V
5 V
20 mA
50 mW
–25 to +85
–30 to +100
°C
°C
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
1
Photocurrent
Collector-emitter cutoff current (Base open) I
Peak sensitivity wavelength
Half-power angle
Rise time
Fall time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%.
3. This device is designed by disregarding radiation.
4. *1: Source: Tungsten lamp (color temperature 2 856K)
*2: Switching time measurement circuit
*
2
*
2
*
CEO
λ
I
VCE = 10 V, L = 1 000 lx 1.0 3.0 mA
L
VCE = 10 V 1 500 nA
VCE = 10 V 800 nm
PD
The angle when the photocurrent is
θ
halved
t
r
VCC = 10 V, IL = 1 mA, RL = 100 W
t
f
30
2.5
3.5
°
µs
µs
Publication date: October 2008
SHE00054BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
PNA1803L
Package (Unit: mm)
LPXLTN2S0002
Pin name
1: Emitter
2: Collector
2
SHE00054BED
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