Panasonic MAZTxxxH User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Zener Diodes
MAZTxxxH Series
Silicon planar type
For surge absorption circuit
■ Features
•
Two elements anode-common type
•
Power dissipation P
: 150 mW
D
■ Package
•
Pin Name
SSMini3-F2
•
Pin Name
1: Cathode 1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation
Junction temperature T
Storage temperature T
Note)*:PD = 150 mW achieved with a printed circuit board.
*
P
D
j
−55 to +150 °C
stg
150 mW
150 °C
2: Cathode 2
3: Anode
■ Marking Symbol
Refer to the list of the electrical characteristics
within part numbers
■ Internal Connection
3
1
2
■ Common Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage
Zener rise operating resistance R
Zener operating resistance R
Reverse current I
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
*
2. Electrostatic breakdown voltage: ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
VZ guaranted 20 ms after current flow.
V
ZK
R
I
Z
Z
Z
I
Z
I
Z
V
Specified value V
Specified value Ω
Specified value Ω
Specified value µA
R
Refer to the list of the
electrical characteristics
within part numbers
Publication date: August 2008 SKE00013FED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
0
2
MAZTxxxH Series
■ Electrical characteristics within part numbers Ta = 25°C ± 3°C
Zener rise
Zener
operating
resistance
operating
resistance
(Ω)
ZK
VRIZ = 5 mA IZ = 0.5 mA
Marking symbol
I
Z
Reverse current
Part number
Zener voltage
VZ (V) IR (mA) RZ (Ω)R
Min Nom Max (mA) Max (V) Max Max
MAZT062H 5.8 6.2 6.6
5 0.2 4 50 100 6.2Z
MAZT068H 6.4 6.8 7.2 5 0.1 4 30 60 6.8Z
MAZT082H 7.7 8.2 8.7 5 0.1 5 30 60 8.2Z
Note) ∗: IZ = 1.0 mA
PD T
)
mW
(
250
200
D
150
100
a
10 mm
K
Print foil
t = 0.035 mm
10 mm
0.8 mm
A
)
mA
(
Z
2
10
= 25°C
T
a
10
1
−1
10
Zener current I
Power dissipation P
50
0
020
Ambient temperature Ta (°C
RZ I
2
10
)
Ω
(
Z
10
MAZT082H
1
MAZT068H
Z
MAZT062H
1601208040
T
= 25°C
a
)
Zener operating resistance R
−2
10
−3
10
12
)
10
mV / °C
(
Z
S
8
6
4
2
IZ V
Z
MAZT082H
MAZT068H
MAZT062H
468101214
Zener voltage VZ (V
SZ I
Z
= 25°C to 150°C
T
a
MAZT082H
MAZT068H
MAZT062H
)
IF V
F
2
10
= 25°C
T
a
)
10
mA
(
F
1
−1
Forward current I
10
−2
10
0 0.4 0.8 1.
Forward voltage VF (V
Ct V
R
30
)
pF
(
t
20
MAZT068H
10
MAZT062H
MAZT082H
Terminal capacitance C
T
= 25°C
a
)
−1
10
11010
Zener current IZ (mA
)
2
Temperature coefficient of zener voltage
0
2
0 102030405060
Zener current IZ (mA
SKE00013FED
0
)
0
4812
Reverse voltage VR (V)
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