Panasonic MAZL068D Datasheet

5
4

3

1

2

Zener Diodes Composite Elements MA111

MAZL068D

Silicon planer type

Constant voltage, constant current, waveform
cripper and surge absorption circuit

■ Features

●

Mini type package (5-pin)

●

Four anode-common element wiring of MA8068

■ Absolute Maximum Ratings (Ta= 25˚C)

Parameter
Average forward current
Instanious forward current
Total power dissipation
Junction temperature
Storage temperature

*1Working value in a single piece
*2 With a printed-circuit board

Symbol

I

F(AV)

I

FRM

2

P

*

tot

T

j

T

stg

Rating

1

100 *

1

200 *

1

200 *

150

– 55 to + 150

Unit

mA
mA

mW

˚C
˚C

+0.2

-

0.3

2.8

+0.25

-

0.05

1.50.65±0.15 0.65±0.15

4

0.05

+0.2

-

2.9

1.9±0.10.8

3

0.95 0.95

0.1

+0.2

-

1.1

0.1 to 0.3

0 to 0.1

1 : Cathode 1 4 : Anode 1, 2
2 : Cathode 2 Anode 3, 4
3 : Cathode 3 5 : Cathode 4

Mini Type Package (5-pin)

■ Internal Connection

15

2

0.05

+0.1

-

0.3

0.4±0.2

Unit : mm

1.45±0.1

0.06

+0.1

-

0.16

1

■ Electrical Characteristics (Ta= 25˚C)

Parameter
Forward voltage
Zener voltage

Operating resistance

Reverse current
Temperature coefficient of zener voltage
Terminal capacitance

Note 1. Test method : Depend on JIS C7031 testing

2. Rated input/output frequency : 5MHz

3. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* 2 : Guaranteeed at 20ms after power application
* 3 : Tj= 25 to 150˚C

Symbol

V

F

2

VZ*
R

ZK

R

Z

I

R

3

SZ*
C

t

*

=10mA

I

F

= 5mA

I

Z

= 0.5mA

I

Z

= 5mA

I

Z

= 4V

V

R

= 5mA

I

Z

= 0V, f=1MHz

V

R

Condition

min

6.40

■ Marking

6.8D

typ

0.9

6.80

3.0

max

1.0

7.20
60
20

0.1

40

Unit

V
V

Ω
Ω

µA

mV/˚C

pF

Zener Diodes Composite Elements MAZL068D

P

300

– Ta IF – V

tot

With a printed-circuit board

1000

F

100

Ta=25˚C

IZ – V

Z

25˚C 100˚C

250

)
mW

(

200

tot

150

100

Power dissipation P

50

0

0 25020015010050

Ambient temperature Ta (˚C

RZ – I

1000

(Ω)

Z

100

10

Operating resistance R

Z

Ta=25˚C

100

)
A

(m

F

10

1

Forward current I

0.1

0.01
0 0.2 0.4 0.6 0.8 1.0 1.2

)

30

)
pF

(

20

D

10

Diode capacitance C

Forward voltage VF (V

Ta=150˚C

Ct – V

100˚C 25˚C

)

R

f=1MHz
Ta=25˚C

–20˚C

10

)
A

(m

Z

0.1

Zener current I

0.01

0.001

100

10

)
nA

(

R

Reverse current I

0.1

Ta=–20˚C

1

786

Zener voltage V

IR – V

Ta=150˚C

1

100˚C

R

25˚C

150˚C

(V)

Z

1

0.3

10.5 3 30510 50

IZ

)

Z

Ta=25˚C

(mA)

Zener current IZ (mA

Noise – I

100

50

10

)

5

nV/ Hz

(

Noise

1

0.5

0.1

0.1 0.5 5110
Zener current

0

0614532

Reverse voltage V

R

(V

0.01
0123456

)

Reverse voltage V

R

(V

)