ESD Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZE062D
Silicon planar type
For surge absorption circuit
0.3
+0.1
–0
Unit: mm
+0.1
0.15
–0.05
■ Features
• Low joint capacity zener diode
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current I
Power dissipation
*
Junction temperature T
Storage temperature T
FRM
P
stg
D
j
Note)*:PD = 200 mW achieved with a printed circuit board.
200 mA
150 mW
150 °C
−55 to +150 °C
±0.1
±0.1
2.1
1.25
0 to 0.1
5˚
±0.1
0.9
1: Cathode 1
2: Cathode 2
3: Anode
(0.15)
132
(0.65)
(0.65)
1.3
±0.1
±0.2
2.0
5˚
EIAJ: SC-79 SMini3-F1 Package
Marking Symbol: 6.2C
Internal connection
3
2
1
(0.425)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Zener voltage
*
Zener rise operating resistance R
Zener operating resistance R
Reverse current I
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. Electrostatic breakdown voltage: ±15 kV
Test method: IEC-801 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Test unit: ESS-200AX
4.*: The VZ value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
Guaranteed at 20 ms after power application.
Publication date: March 2004 SKE00010CED
F
V
Z
ZK
Z
R
t
IF = 10 mA 0.9 1.0 V
IZ = 5 mA 5.9 6.5 V
IZ = 0.5 mA 100 Ω
IZ = 5 mA 30 Ω
VR = 5.5 V 3 µA
VR = 0 V, f = 1 MHz 8 pF
1
MAZE062D
This product complies with the RoHS Directive (EU 2002/95/EC).
PD T
K
IR V
a
10 mm
10 mm
0.8 mm
Print foil
t = 0.035 mm
R
)
)
250
200
)
mW
(
D
150
100
Power dissipation P
50
0
0 2001601208040
Ambient temperature Ta (°C
1
−1
10
)
nA
(
R
−2
10
−3
10
Reverse current I
−4
10
−5
10
Ta = 150°C
T
= 100°C
a
T
= 25°C
a
0246
Reverse voltage VR (V
IZ V
2
A
10
= 150°C
T
a
10
Ta = 100°C
)
Z
mA
(
Z
−1
10
Ta = 25°C
1
= −20°C
T
a
Zener current I
−2
10
−3
10
048
Zener voltage VZ (V
RZ I
2
10
)
Ω
(
Z
10
1
)
Z
Ta = 25°C
2
10
)
10
mA
(
F
1
−1
Forward current I
10
−2
10
0 0.4 0.8 1.2
)
mV / °C
(
15
Z
5
IF V
F
T
= 150°C
a
= 100°C
T
a
Ta = 25°C
Ta = −20°C
Forward voltage VF (V
SZ I
Z
)
Zener operating resistance R
Temperature coefficient of zener voltage S
−1
10
10−210
−1
Zener current IZ (mA
10110
2
)
−5
0
Zener current IZ (mA)
20 40
Ct V
R
)
8
pF
(
t
4
Terminal capacitance C
0
0
24 6
Reverse voltage VR (V)
2
SKE00010CED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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