Panasonic MAZC062D User Manual
ESD Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZC062D
Silicon planar type
For surge absorption circuit
■ Features
•
Low joint capacity zener diode
•
Two elements anode-common type
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current I
Power dissipation
*
Junction temperature T
Storage temperature T
Note)*:P
= 200 mW achieved with a printed circuit board.
tot
FRM
P
stg
D
j
200 mA
200 mW
150 °C
−55 to +150 °C
Unit: mm
+0.10
0.40
–0.05
3
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
10˚
EIAJ: SC-59 Mini3-G1 Package
(0.65)
+0.2
–0.1
1.1
0 to 0.1
+0.3
–0.1
1.1
+0.10
0.16
–0.06
5˚
1: Cathode 1
2: Cathode 2
3: Anode
Marking Symbol: 6.2C
0.4±0.2
Internal Connection
3
2
1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Zener voltage
Zener rise operating resistance R
*
V
ZK
Zener operating resistance R
Reverse current I
R
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz
3. Electrostatic breakdown voltage: ±15 kV
Test method: IEC-801 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
Test unit: ESS-200AX
4.*: The VZ value is for the temperature of 25°C. In other cases, carry out the temperature compensation.
Guaranteed at 20 ms after power application.
IF = 10 mA 0.9 1.0 V
F
IZ = 5 mA 5.9 6.5 V
Z
IZ = 0.5 mA 100 Ω
IZ = 5 mA 30 Ω
Z
VR = 5.5 V 3 µA
VR = 0 V, f = 1 MHz 8 pF
t
Publication date: March 2004 SKE00009CED
1
MAZC062D
This product complies with the RoHS Directive (EU 2002/95/EC).
PD T
K
IR V
a
10 mm
10 mm
0.8 mm
Print foil
t = 0.035 mm
R
)
)
250
200
)
mW
(
D
150
100
Power dissipation P
50
0
0 25020015010050
Ambient temperature Ta (°C
1
−1
10
)
nA
(
R
−2
10
−3
10
Reverse current I
−4
10
−5
10
Ta = 150°C
T
= 100°C
a
T
= 25°C
a
0246
Reverse voltage VR (V
IZ V
2
A
10
= 150°C
T
a
10
Ta = 100°C
)
Z
mA
(
Z
−1
10
Ta = 25°C
1
= −20°C
T
a
Zener current I
−2
10
−3
10
048
Zener voltage VZ (V
RZ I
2
10
)
Ω
(
Z
10
1
)
Z
Ta = 25°C
2
10
)
10
mA
(
F
1
−1
Forward current I
10
−2
10
0 0.4 0.8 1.2
)
mV / °C
(
15
Z
5
IF V
F
T
= 150°C
a
= 100°C
T
a
Ta = 25°C
Ta = −20°C
Forward voltage VF (V
SZ I
Z
)
Zener operating resistance R
Temperature coefficient of zener voltage S
−1
10
10−210
−1
Zener current IZ (mA
10110
2
)
−5
0
Zener current IZ (mA)
20 40
Ct V
R
)
8
pF
(
t
4
Terminal capacitance C
0
0
24 6
Reverse voltage VR (V)
2
SKE00009CED
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