Panasonic MAZ3047X Datasheet
MA3047W
Silicon planer type
Constant voltage, constant current, waveform
cripper and surge absorption circuit
■ Features
●
Mini type package (4-pin)
●
Two-element wiring in parallel of MA3047
■ Absolute Maximum Ratings (Ta= 25˚C)
Unit : mm
■ Internal Connection
Unit
V
V
Ω
µA
mV/˚C
Condition
I
F
=10mA
I
Z
= 5mA
I
Z
= 5mA
V
R
= 1V
I
Z
= 5mA
Symbol
V
F
VZ*
2
R
Z
I
R
SZ*
3
■ Electrical Characteristics (Ta= 25˚C)
*
1
Note 1. Rated input/output frequency : 5MHz
2. * 1 : The VZ value is for the temperature of 25˚C. In other cases, carry out the temperature compensation.
* 2 : Guaranteeed at 20ms after power application
* 3 : Tj= 25 to 125˚C
■ Marking
Unit
mA
mA
mA
mA
mW
mW
W
˚C
˚C
Symbol
I
F(AV)
I
F(AV)
I
FRM
I
FRM
P
tot
*
1
P
tot
*
1
P
ZSM
*
2
T
j
T
stg
*1 With a printed-circuit board
*2t=100µ s, Tj=150˚C
Parameter
Average forward current
Instanious forward current
Total power dissipation
Non-repetitive reverse surge power dissipation
Junction temperature
Storage temperature
Rating
100
75
200
150
200
150
15
150
– 55 to + 150
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
4 1
32
Single
Double
Single
Double
Single
Double
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
0.5R
1
2
4
3
0.950.95
1.9±0.2
0.6
+0.1
–0
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
0.4
+0.1
–0.05
0.2
0.4
+0.1
–0.05
1.45
0.1 to 0.3
0.5
2.9
+0.2
–0.05
Zener Diodes Composite Elements MA111
Parameter
Forward voltage
Zener voltage
Operating resistance
Reverse current
Temperature coefficient of zener voltage
min
4.4
– 3.5
typ
0.8
4.7
50
–1.4
max
0.9
5.0
80
3
0.2
4.7W
Zener Diodes Composite Elements MA3047W
IF – V
F
VF – Ta IR – V
R
IZ – V
Z
IR – Ta RZ – I
Z
CD – V
R
P
tot
– Ta P
ZSM
– t
W
0.01
0 0.2 0.4 0.6 1.00.8 1.2
0.1
1
10
100
Forward voltage V
F
(V)
Forward curren I
F
(
mA
)
Ta=150˚C
100˚C
–20˚C
25˚C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
–40 0 40 80 120 160 200
Ambient temperature Ta (˚C
)
Forward voltage V
F
(
V
)
IF=100mA
10mA
3mA
1
0 1.0 2.0 3.0 4.0 5.0 6.0
10
100
1000
10000
Reverse voltage V
R
(V)
Reverse current I
R
(
nA
)
Ta=150˚C
25˚C
100˚C
0.001
0 2.0 4.0 6.0 7.05.03.01.0
0.01
0.1
1
10
100
Zener voltage V
Z
(V)
Zener current I
Z
(
mA
)
Ta=150˚C –20˚C
25˚C100˚C
1
–40 0 40 80 120 160 200
10
100
1000
10000
Ambient temperature Ta (˚C
)
Reverse current I
R
(
nA
)
VR=1V
0.5V
3
10
100
1000
300
30
3000
0.3
10.5 3 30510 50
Operating resistance R
Z
(
Ω
)
Zener current I
Z
(mA)
Ta=25˚C
0
0614532
20
40
60
80
100
120
140
160
Reverse voltage V
R
(V)
Diode capacitance C
D
(
pF
)
f=1MHz
Ta=25˚C
0
0 240120 16080 20040
320
240
160
80
280
200
120
40
Ambient temperature Ta (˚C
)
Power dissipation P
tot
(
mW
)
Heat sink
Copper foil 0.8mm × 10mm
Pulse width t
W
(ms)
Non-repetitive reverse
surge power dissipation
P
ZSM
(
W
)
1
0.03 0.3 3
10
100
1000
0.1 10130
t
W
Non repetitive
P
ZSM
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