Panasonic MAS3795E User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MAS3795E
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
•
High-density mounting is possible
•
Optimum for high frequency rectification because of its short
reverse recovery time (t
•
Low forward voltage V
V
= < 0.3 V (at IF = 1 mA)
F
•
SSS-Mini type 3-pin package
)
rr
optimum for low voltage rectification
F
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC)
Single I
Double 20
Peak forward current
Single I
Double 110
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
30 V
30 V
30 mA
150 mA
125 °C
−55 to +125 °C
+0.05
0.33
–0.02
3
12
+0.05
0.23
–0.02
(0.40)(0.40)
0.80
±0.05
1.20±0.05
5°
Marking Symbol: M3
Internal Connection
+0.05
0.10
–0.02
±0.050.15 min.
0.80
1.20±0.05
5°
0.52±0.03
0 to 0.01
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
3
Unit: mm
0.15 min.
0.15 max.
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η Vin = 3 V
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz 3.*: trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
VR = 30 V 30 µA
IF = 1 mA 0.3 V
IF = 30 mA 1.0
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
I
= 1 mA
rr
t
Publication date: June 2002 SKH00118AED
1
MAS3795E
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
Ta = 125°C
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.4 0.8 1.2 1.6 2.0 2.4
F
75°C 25°C
–20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
Reverse current I
1
)
VR = 25 V
3 V
1 V
IR V
4
10
3
10
)
µA
(
R
2
10
10
R
Reverse current I
1
−1
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
3.0
2.5
)
pF
(
t
2.0
1.5
1.0
Terminal capacitance C
0.5
R
Ta = 125°C
75°C
25°C
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
a
10 mA
Forward voltage V
0.2
1 mA
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
IF = 30 mA
)
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
)
0 5 10 15 20 25 30
Reverse voltage VR (V
)
SKH00118AED
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