Panasonic MAS3132E User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MAS3132E
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
•
Two elements are contained in one package, allowing highdensity mounting
•
Short reverse recovery time t
•
Small terminal capacitance C
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current Single I
Double 150
Peak forward current Single I
Double 340
Non-repetitive peak
forward surge current *Double 750
Junction temperature T
Storage temperature T
Note)*: t = 1 s
Single I
rr
t
R
RM
F
FM
FSM
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
+0.05
0.33
–0.02
3
12
+0.05
0.23
–0.02
5˚
(0.40)(0.40)
0.80
±0.05
1.20±0.05
0 to 0.01
Marking Symbol: MU
Internal Connection
12
Unit: mm
+0.05
0.10
–0.02
±0.050.15 min.
1.20±0.05
0.80
5˚
0.52±0.03
1: Anode 1
2: Anode 2
3: Cathode 1, 2
SSSMini3-F1 Package
3
0.15 min.
0.15 max.
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: t
measurement circuit
rr
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: November 2003 SKF00065BED
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
= 0.1 I
rr
t
R
1
MAS3132E
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
a
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
Ta = 150°C
100°C
25°C
−20°C
)
= 75 V
V
R
35 V
6 V
IR V
R
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
1
0 20 40 60 80 100 120
Reverse voltage VR (V
Ct V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
R
= 150°C
T
a
100°C
25°C
f = 1 MHz
= 25°C
T
a
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
)
Ambient temperature Ta (°C
I
F(surge)
)
A
(
F(surge)
3
10
2
10
10
1
a
t
= 100 mA
I
F
10 mA
3 mA
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
Forward surge current I
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
0 20406080100120
)
Reverse voltage VR (V
)
−1
10
−1
Pulse width tW (ms
10110
)
SKF00065BED
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