Panasonic MANV250GE User Manual
Zener Diodes
100
90
50
10
T2
T
t
T1
Percent of
I
PP
Front time:
T1 = 1.25 × T = 8 µs ±20%
Time to half value:
T2 = 20 µs ±20%
MANV250GE
Silicon planar type
For surge protect
Features
Large surge reduction power
Package
Code
SMini2-F3
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
1
Peak pulse power
Peak pulse current
Maximum peak reverse voltage V
Total power dissipation
Junction temperature T
Storage temperature T
Electrostatic discharge
Note) *1 : Test method: IEC61000-4-5 (tp = 8/20 ms, Unrepeated)
*2: PT = 150 mW achieved with a printed circuit board.
3 : Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
*
*
1
*
2
*
3
*
P
PP
I
PP
RM
P
stg
ESD
T
j
450 W
9 A
18 V
150 mW
150
–55 to +150
±30
°C
°C
kV
Pin Name
1: Anode
2: Cathode
Marking Symbol: RD
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
1
Breakdown voltage
Reverse current I
Clamping voltage
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: VZ guaranted 20 ms after current flow.
*2: Pulse Waveform
*
2
*
V
BR
R
V
IR = 1 mA 20.0 25.0 30.0 V
VR = 18 V 10.0
IPP = 9.0 A, tp = 8/20 ms 50.0 V
C
IR = 0 V, f = 1 MHz 76 pF
t
mA
Publication date: October 2005 SKE00038AED 1
MANV250GE
10
−4
0 0.8 1.00.4 0.60.2 1.6 1.81.2 1.4 2.0
10
−2
10
−1
1
10
10
−3
10
2
Forward current I
F
(m
A
)
Ta = 25°C
MANV250GE_IF-V
F
Forward voltage VF
(V)
10
−7
10
−6
0 4 62 128 10 2016 1814
10
−5
10
−3
10
−4
Ta = 25°C
Reverse current I
R
(
µA
)
MANV250GE_IR-V
R
Reverse voltage VR (V
)
10
−6
10
−5
10
−3
10
−4
10
−1
10
−2
5 10 15 25 30 3520 40
1
Zener current I
Z
(
A
)
Ta = 25°C
MANV250GE_IZ-V
Z
Zener voltage VZ
(V)
10
0 5 1510 20
100
Terminal capacitance C
t
(
pF
)
Ta = 25°C
f = 1 MHz
MANV250GE_Ct-V
R
Reverse voltage VR
(V)
IF VF IR VR IZ V
Ct V
R
Z
2 SKE00038AED
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