Panasonic MALS180XG User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Zener Diodes
MALS180XG
Silicon planar type
For ESD protection
Overview
MALS180XG is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and reverse surges.
Features
High resistance to surge voltages: 15 kV guaranteed
Package
Code
SSMini2-F4
Pin Name
1: Cathode
2: Cathode
Low terminal capacitance Ct for low loss, low distortion, and good
retention of signal waveforms.
Marking Symbol: SX
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current I
1
Total power dissipation
Electrostatic discharge
*
2
*
Junction temperature T
Storage temperature T
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
FRM
P
ESD
stg
T
j
200 mA
150 mW
±15
150
-55 to +150
kV
°C
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage
Zene operating resistance R
Reverse current I
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
3. * : VZ guaranted 20 ms after current flow.
*
V
= 5 mA 17.5 20.0 V
ZIZ
= 5 mA 60
ZIZ
VR = 13.0 V 15
R
VR = 0 V, f = 1 MHz 4 pF
t
Ω
nA
Publication date: January 2009 SKE00053AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini2-F4 Unit: mm
0.30 ±0.05
0.80
+0.05
−0.03
2
1
0.60
+0.05
−0.03
5°
(0.15)
0.13
+0.05
−0.02
1.60 ±0.05
1.20
+0.05
−0.03
0 to 0.05
0.20 ±0.05
5°
MALS180XG
2 SKE00053AED
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