Panasonic MALS068G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Zener Diodes
MALS068G
Silicon planar type
For ESD protection
Overview
MALS068G is optimal for cell phones and AV application, all types of
I/O circuits.
Package
Code
SSMini2-F4
Pin Name
Features
High resistance to surge voltages: 30 kV guaranteed
Low terminal capacitance Ct for low loss, low distortion, and good
1: Anode
2: Cathode
retention of signal waveforms.
Marking Symbol: RE
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
1
Total power dissipation
Electrostatic discharge
Junction temperature T
Storage temperature T
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
*
2
*
P
ESD
stg
T
j
150 mW
±30
150
-55 to +150
kV
°C
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
Reverse current I
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. * : VBR guaranted 20 ms after current flow.
The temperature must be controlled 25°C for VBR measurement.
VBR value measured at other temperature must be adjusted to VBR (25°C).
*
V
BRIR
R
t
= 1 mA 6.4 6.8 7.2 V
VR = 4 V 0.5
VR = 0 V, f = 1 MHz 50 pF
mA
Publication date: April 2008 SKE00042AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
SSMini2-F4 Unit: mm
0.30 ±0.05
0.80
+0.05
−0.03
2
1
0.60
+0.05
−0.03
5°
(0.15)
0.13
+0.05
−0.02
1.60 ±0.05
1.20
+0.05
−0.03
0 to 0.05
0.20 ±0.05
5°
MALS068G
2 SKE00042AED
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