Panasonic MALM062HG User Manual
本製品はRoHS指令(EU 2002/95/EC)に対応しています。
3
(K2)
(K3)
4
1
(K1)2(A1, 2, 3, 4)
(K4)
5
Zener Diodes
MALM062HG
Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
Four elements anode-common type
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
1
Total power dissipation
Junction temperature T
Storage temperature T
Electrostatic discharge
Note) *1 : PD = 150 mW achieved with a printed circuit board.
2 : Test method: IEC61000-4-2
*
(C = 150 pF, R = 330 W, Contact discharge: 10 times)
*
2
*
P
D
stg
ESD
j
–55 to +150
150 mW
150
°C
°C
±30
kV
Package
Code
SSMini5-F3
Pin Name
1: Cathode 1 2: Anode 1, 2, 3, 4
3: Cathode 2 4: Cathode 3
5: Cathode 4
Marking Symbol: 6.2E
Internal Connection
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
Reverse current I
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for VBR mesurement.
VBR value measured at other temperature must be adjusted to VBR (25°C)
3. *: VBR guaranted 20 ms after current flow.
*
V
BR
R
IR = 1 mA 5.8 6.2 6.6 V
VR = 4.0 V 1.0
VR = 0 V, f = 1 MHz 55 pF
t
mA
Publication date: June 2008 SKE00048AED 1
本製品はRoHS指令(EU 2002/95/EC)に対応しています。
10
−2
0.4 0.6 0.8 1.0
10
−1
1
10
10
2
Forward current I
F
(
mA
)
Ta = 25°C
MALM062H_IF-V
F
Forward voltage VF
(V)
10
−3
0 2 4 6
10
−2
10
−1
1
10
10
−3
10
−2
Ta = 25°C
Reverse current I
R
(
nA
)
MALM062H_IR-V
R
Reverse voltage VR (V
)
10
−1
0 2 4 86 10
1
10
10
2
Zener current I
Z
(
mA
)
Ta = 25°C
f = 1 MHz
MALM062H_IZ-V
Z
Zener voltage VZ
(V)
1
0 1 2 543 6
10
10
2
10
3
Terminal capacitance C
t
(
pF
)
Ta = 25°C
f = 1 MHz
MALM062H_Ct-V
R
Reverse voltage VR
(V)
10
−1
10
−1
1 10 10
2
1
10
10
2
10
3
Zener operating resistance R
Z
(
Ω
)
Ta = 25°C
MALM062H_RZ-I
Z
Zener current IZ
(mA)
MALM062HG
IF VF IR VR IZ V
Ct VR RZ I
Z
Z
2 SKE00048AED
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