Panasonic MALD068XG User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
100
90
50
10
T2
T
t
T1
Percent of
I
PP
Front time:
T1 = 1.25 × T = 8 µs ±20%
Time to half value:
T2 = 20 µs ±20%
Zener Diodes
MALD068XG
Silicon planar type
For ESD protection
Overview
MALD068XG is optimal for cell phones and AV application, all types of
I/O circuits.
It is possible to protect against forward and reverse surges.
Features
High resistance to surge voltages: 20 kV guaranteed
Low terminal capacitance Ct for low loss, low distortion, and good
retention of signal waveforms.
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
1
Peak pulse current
Peak pulse power
Total power dissipation
Junction temperature
Storage temperature T
Electrostatic discharge ESD
Note) *1: Test method: IEC61000-4-5 (tp = 8/20 µs, Unrepeated)
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
*3: PT = 150 mW achieved with a printed circuit board.
*
1
*
2
*
3
*
I
PP
P
PP
P
T
stg
T
j
3 A
33 W
150 mW
150
–55 to +150
±20
°C
°C
kV
Package
Code
SSSMini2-F3
Pin Name
1: Cathode
2: Cathode
Marking Symbol: A
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
1
Breakdown voltage
Clamping voltage
Reverse current I
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: VBR guaranted 20 ms after current flow.
*2: Pulse Waveform
3. Absolute frequency of input and output is 5 MHz
Publication date: January 2009 SKE00050BED 1
*
2
*
V
BRIZ
V
= 5 mA 5.8 7.2 8.8 V
CIPP
R
= 3.0 A, tp = 8/20 µs 11.0
VR = 3.5 V 500 nA
VR = 0 V, f = 1 MHz 25 pF
t
Ω
MALD068XG
2 SKE00050BED
This product complies with the RoHS Directive (EU 2002/95/EC).
10
−6
0 2 4 6
10
−5
10
−4
1
10
−1
10
−2
10
−3
Reverse current I
R
(
nA
)
MALD068XG_IR-V
R
Reverse voltage VR (V
)
Diode B
Diode A
A
B
Ta = 25°C
10
−4
10
−1
10
−2
10
−3
0 2 4 86 10
1
10
10
2
Zener current I
Z
(
mA
)
MALD068XG_IZ-V
Z
Zener voltage VZ
(V)
A
B
Ta = 25°C
f = 1 MHz
Diode B
Diode A
10
0 1 2 43 5
100
Terminal capacitance C
t
(
pF
)
MALD068XG_Ct-V
R
Reverse voltage VR
(V)
Diode B
Diode A
A
B
Ta = 25°C
f = 1 MHz
IR VR IZ V
Z
Ct V
R
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