Panasonic MA3D755, MA7D55 User Manual

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA3D755 (MA7D55)

Silicon epitaxial planar type (cathode common)

For switching mode power supply

9.9±0.3

4.6±0.2

Unit: mm

2.9±0.2

■ Features

•

Low forward voltage V

•

High dielectric breakdown voltage: > 5 kV

•

Easy-to-mount, due to its V cut lead end

F

■ Absolute Maximum Ratings TC = 25°C

Parameter Symbol Rating Unit

Repetitive peak reverse voltage V

Forward current (Average) I

Non-repetitive peak forward I
surge current

*

Junction temperature T

Storage temperature T

RRM

F(AV)

FSM

j

stg

60 V

90 A

−40 to +125 °C

−40 to +125 °C

5A

15.0±0.513.7±0.2

4.2±0.2

Solder Dip

123

3.0±0.5

φ 3.2±0.1

1.4±0.2

1.6±0.2

0.8±0.1 0.55±0.15

2.54±0.30

5.08±0.50

TO-220D-A1 Package

2.6±0.1

1: Anode
2: Cathode
3: Anode

Note)*: Half sine wave; 10 ms/cycle

■ Electrical Characteristics TC = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Thermal resistance (j-c) R

R

th(j-c)

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Absolute frequency of input and output is 200 MHz.

IF = 2.5 A 0.58 V

F

VR = 60 V 1 mA

3.0 °C/W

Publication date: January 2004 SKH00045BED

Note) The part number in the parenthesis shows conventional part number.

1

MA3D755

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

10

75°C 25°C

Ta = 125°C

1

)
A

(

F

−1

10

−2

10

Forward current I

−3

10

−4

10

0 0.4 0.8 1.2

F

−20°C

Forward voltage VF (V

IR  T

2

10

10

)

mA
(

R

1

−1

10

Reverse current I

−2

10

−3

10

−40 0 40 80 120 160 200

a

VR = 60 V

Ambient temperature Ta (°C

30 V
10 V

IR  V

Ct  V

R

Ta = 125°C

R

f = 1 MHz
T

)

= 25°C

a

75°C

25°C

0.8

)

0.6

V
(

F

0.4

Forward voltage V

0.2

0

−40 0 40 80 120 160 200

20

)
W

(

15

D(AV)

10

5

2

10

10

)

mA
(

R

1

−1

10

Reverse current I

−2

10

−3

10

)

0 102030405060

Reverse voltage VR (V

800

)

pF

600

(

t

400

200

Terminal capacitance C

Power dissipation (Average) P

0

)

0204060

Reverse voltage VR (V

)

0

0246

Forward current (Average) I

VF  T

a

IF = 2.5 A

1 A

100 mA

Ambient temperature Ta (°C

P

 I

D(AV)

F(AV)

t0 / t1 = 1/6

F(AV)

1/3
1/2
DC

t
t

)

0

1

(A

)

I

 T

)

A

(

F(AV)

8

6

4

2

F(AV)

C

t0 / t1 = 1/2

1/3

1/6

DC

t

0

t

1

Forward current (Average) I

0

20 60 100 140

Case temperature TC (°C

)

2

SKH00045BED