Panasonic MA3D752, MA7D52, MA3D752A User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3D752 (MA7D52), MA3D752A (MA7D52A)
Silicon epitaxial planar type (cathode common)
Unit: mm
For switching mode power supply
9.9±0.3
4.6±0.2
2.9±0.2
■ Features
•
Low forward voltage V
•
High dielectric breakdown voltage: > 5 kV
•
Easy-to-mount, due to its V cut lead end
F
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Repetitive peak MA3D752 V
RRM
reverse voltage MA3D752A 45
Non-repetitive peak
MA3D752 V
RSM
forward surge voltage
Forward current (Average) I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
F(AV)
FSM
j
stg
40 V
40 V
20 A
120 A
−40 to +125 °C
−40 to +125 °C
15.0±0.513.7±0.2
4.2±0.2
Solder Dip
123
3.0±0.5
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
TO-220D-A1 Package
2.6±0.1
1: Anode
2: Cathode
(Common)
3: Anode
Note)*: Half sine wave; 10 ms/cycle
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current MA3D752 I
F
R
MA3D752A VR = 45 V, TC = 25°C5
Thermal resistance (j-c) R
th(j-c)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 100 MHz.
IF = 10 A, TC = 25°C 0.55 V
VR = 40 V, TC = 25°C5mA
3.0 °C/W
Publication date: April 2004 SKH00044BED
Note) The part numbers in the parenthesis show conventional part number.
1
MA3D752, MA3D752A
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
2
10
T
=
125°C
a
10
(A)
F
1
−1
10
Forward current I
−2
10
−3
10
0 0.4 0.8 1.2
F
75°C 25°C
−20°C
Forward voltage VF
IR T
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160 200
a
VR = 45 V
20 V
10 V
Ambient temperature Ta
(V)
(°C)
IR V
Ct V
R
Ta = 125°C
75°C
25°C
(V)
R
f = 1 MHz
= 25°C
T
a
(V)
2
10
10
)
mA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 102030405060
Reverse voltage VR
1 600
)
pF
1 200
(
t
800
400
Terminal capacitance C
0
0204060
Reverse voltage VR
VF T
I
a
IF = 20 A
10 A
5 A
F(AV)
t0 / t1 = 1/6
(°C)
1/3
1/2
DC
t
0
t
1
0.8
)
0.6
V
(
F
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
Ambient temperature Ta
P
D(AV)
)
W
(
D(AV)
P
40
30
20
10
Power dissipation (Average)
0
081624
Forward current (Average) I
F(AV)
(A)
I
T
32
)
28
A
(
24
F(AV)
20
16
12
8
4
Forward current (Average) I
0
20 40 60 80 100 120 140
F(AV)
Case temperature TC
t0 / t1 = 1/2
1/3
1/6
C
DC
(°C)
t
0
t
1
2
SKH00044BED
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