Panasonic MA3D750, MA3D750A, MA7D50 User Manual

Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3D750 (MA7D50), MA3D750A (MA7D50A)
Silicon epitaxial planar type (cathode common)
Unit: mm
For switching mode power supply
9.9±0.3
4.6±0.2
2.9±0.2
Features
High dielectric breakdown voltage: > 5 kV
Easy-to-mount, due to its V cut lead end
F
Absolute Maximum Ratings TC = 25°C
Parameter Symbol Rating Unit
Repetitive peak MA3D750 V
RRM
reverse-voltage MA3D750A 45
Forward current (Average) I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
F(AV)
FSM
j
stg
40 V
10 A
120 A
40 to +125 °C
40 to +125 °C
15.0±0.513.7±0.2
4.2±0.2
Solder Dip
123
3.0±0.5
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
TO-220D-A1 Package
2.6±0.1
1: Anode 2: Cathode
(Common)
3: Anode
Note)*: Half sine wave; 10 ms/cycle
Electrical Characteristics TC = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current MA3D750 I
R
MA3D750A VR = 45 V, TC = 25°C3
Thermal resistance (j-c) R
th(j-c)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 150 MHz.
IF = 5 A, TC = 25°C 0.55 V
F
VR = 40 V, TC = 25°C3mA
3.0 °C/W
Publication date: April 2004 SKH00043BED
Note) The part numbers in the parenthesis show conventional part number.
1
MA3D750, MA3D750A
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
20°C
75°C 25°C
F
2
10
10
)
Ta = 125°C
A (
F
1
1
10
Forward current I
2
10
3
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
5
10
4
10
) µA
(
R
3
10
2
10
a
VR = 45 V
20 V 10 V
Reverse current I
10
1
40 0 40 80 120 160 200
Ambient temperature Ta (°C
IR V
IR V
R
Ta = 125°C
75°C
25°C
R
Ta = 125°C
75°C
25°C
1.6
1.4
)
1.2
V (
F
1.0
0.8
0.6
Forward voltage V
0.4
0.2
0
40 0 40 80 120 160 200
)
16
)
14
W (
12
D(AV)
10
8
6
4
2
Power dissipation (Average) P
0
024681012
)
Forward current (Average) I
5
10
4
10
) µA
(
R
3
10
2
10
Reverse current I
10
1
)
0 102030405060
Reverse voltage VR (V
5
10
4
10
) µA
(
R
3
10
2
10
Reverse current I
10
1
)
0 102030405060
Reverse voltage VR (V
VF T
a
IF = 10 A
5 A
1 A
Ambient temperature Ta (°C
P
I
D(AV)
F(AV)
t0 / t1 = 1/6
F(AV)
1/3 1/2
DC
t t
)
0
1
(A
)
I
T
16
)
14
A
(
12
F(AV)
10
8
6
4
2
Forward current (Average) I
0
20 40 60 80 100 120 140
F(AV)
Case temperature TC (°C
C
t0 / t1 = 1/2
1/3
1/6
DC
t
0
t
1
)
2
SKH00043BED
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