Panasonic MA3Z792, MA792 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3Z792 (MA792)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
High-density mounting is possible
•
Forward current (Average) I
•
Optimum for high frequency rectification because of its short
reverse recovery time t
•
Low forward voltage V
rr
F
= 100 mA rectification is possible
F(AV)
and good rectification efficiency
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Peak forward current I
Forward current (Average) I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
R
RRM
FM
F(AV)
FSM
j
stg
Note)*: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
30 V
30 V
300 mA
100 mA
1A
125 °C
−55 to +125 °C
0.9
Unit: mm
0.15
±0.1
(0.15)
+0.1
0.3
–0
±0.1
±0.1
2.1
1.25
132
(0.65)
(0.65)
1.3
±0.1
±0.2
2.0
5˚
1 : Anode
2 : N.C.
3 : Cathode SMini3-F1 Package
5˚
0 to 0.1
Marking Symbol: M3T
Internal Connection
3
12
+0.1
–0.05
(0.425)
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz. 4.*: t
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004 SKH00096BED
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 0.55 V
VR = 30 V 15 µA
VR = 0 V, f = 1 MHz 20 pF
t
IF = IR = 100 mA 2.0 ns
Irr = 0.1 IR, RL = 100 Ω
measurement circuit
rr
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
I
R
t
I
= 100 mA
F
= 100 mA
R
= 100 Ω
L
rr
= 0.1 I
rr
Note) The part number in the parenthesis shows conventional part number.
t
R
1
MA3Z792
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
Ta = 125°C
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
75°C 25°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
Reverse current I
1
−20°C
)
VR = 30 V
3 V
1 V
IR V
4
10
3
10
)
µA
(
R
2
10
10
R
Reverse current I
1
−1
10
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
24
20
)
pF
(
t
16
12
8
Terminal capacitance C
4
R
Ta = 125°C
75°C
25°C
)
f = 1 MHz
= 25°C
T
a
VF T
1.0
0.8
)
V
(
F
0.6
0.4
a
IF = 100 mA
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
10 mA
3 mA
Ambient temperature Ta (°C
)
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
)
0 5 10 15 20 25 30
Reverse voltage VR (V
)
SKH00096BED
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