Panasonic MA3X791, MA791 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X791 (MA791)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
• Two MA3X786 (MA786) is contained in one package (series
connection)
• Forward current I
• Optimum for high frequency rectification because of its short
reverse recovery time t
• Low forward voltage VF and good rectification efficiency
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current Single I
Peak forward Single I
current Series
Non-repetitive peak forward I
surge current
Junction temperature T
Storage temperature T
Note)*1: Value of each diode in series diodes used.
2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
*
= 100 mA rectification is possible
F
rr
R
RRM
1
*
Series
1
*
2
*
F
FM
FSM
j
stg
30 V
30 V
100 mA
70
300 mA
200
1A
125 °C
−55 to +125 °C
+0.10
0.40
–0.05
3
+0.25
–0.05
1.50
2
1
10˚
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
(0.65)
+0.2
–0.1
1.1
0 to 0.1
Marking Symbol: M4A
Internal Connection
3
12
0.16
+0.2
–0.3
2.8
5˚
+0.3
–0.1
1.1
Mini3-G1 Package
Unit: mm
+0.10
–0.06
1: Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-59
±0.2
0.4
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance C
Reverse recovery time
*
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz.
4. *: t
measurement circuit
rr
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: February 2005 SKH00090DED
F
R
t
t
rr
Bias Application Unit (N-50BU)
A
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 0.55 V
VR = 30 V 15 µA
VR = 0 V, f = 1 MHz 20 pF
IF = IR = 100 mA 2.0 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
V
R
t
t
δ = 0.05
90%
= 2 µs
p
= 0.35 ns
r
t
I
F
I
= 100 mA
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
Note) The part number in the parenthesis shows conventional part number.
1
MA3X791
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
1
−1
10
)
A
Ta = 125°C
(
F
−2
10
−3
10
Forward current I
−4
10
−5
10
0 0.2 0.4 0.6
F
−20°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
V
Reverse current I
1
75°C
25°C
= 30
R
3 V
1 V
IR V
Ct V
R
Ta = 125°C
R
75°C
25°C
)
0.8
)
0.6
V
(
F
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
3
10
)
A
(
2
10
F(surge)
10
1
−2
10
−3
10
)
A
(
R
−4
10
−5
10
Reverse current I
−6
10
−7
10
)
V
0 5 10 15 20 25 30
Reverse voltage VR (V
30
)
pF
(
t
20
10
Terminal capacitance C
VF T
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta
I
t
F(surge)
W
Ta = 25°C
t
(°C)
I
F(surge)
W
Forward surge current I
−1
10
−40 0 40 80 120 160 200
Ambient temperature Ta
2
(°C)
0
0102030
Reverse voltage VR (V
)
SKH00090DED
−1
10
−1
10
110
Pulse width tW (ms
)
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