Panasonic MA3J744, MA744 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3J744 (MA744)
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
High-density mounting is possible
•
Forward current (Average) I
= 200 mA rectification is possible
F(AV)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Repetitive peak reverse voltage V
Forward current (Average) I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note)*:t = 1 s
R
RRM
F(AV)
FM
FSM
j
stg
30 V
30 V
200 mA
300 mA
150 °C
−55 to +150 °C
1A
+0.1
(0.65)
5˚
1 : Anode
132
(0.65)
1.3
±0.1
±0.2
2.0
0.3
–0
±0.1
±0.1
2.1
1.25
5˚
0 to 0.1
0.9
0.15
±0.1
(0.15)
2 : N.C.
3 : Cathode
EIAJ: SC-79 SMini3-F1 Package
Marking Symbol: M1M
Internal Connection
3
Unit: mm
+0.1
–0.05
(0.425)
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
measurement circuit
4.*:t
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004 SKH00057BED
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
IF = 200 mA 0.55 V
VR = 30 V 50 µA
VR = 0 V, f = 1 MHz 30 pF
t
IF = IR = 100 mA 3.0 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
I
= 100 mA
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
rr
= 0.1 I
t
R
Note) The part number in the parenthesis shows conventional part number.
1
MA3J744
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
Ta = 150°C
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
100°C 25°C
Forward voltage VF (V
IR T
5
10
4
10
)
µA
(
R
3
10
VR = 30 V
2
10
a
−20°C
)
15 V
5 V
IR V
5
10
4
10
)
µA
(
R
3
10
2
10
R
Ta = 150°C
Reverse current I
10
1
0 5 10 15 20 25 30
Reverse voltage VR (V
Ct V
40
)
pF
30
(
t
20
R
100°C
25°C
)
f = 1 MHz
= 25°C
T
a
VF T
0.5
0.4
)
V
(
F
0.3
0.2
a
IF = 200 mA
Forward voltage V
0.1
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
100 mA
10 mA
)
Reverse current I
10
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
10
Terminal capacitance C
0
0 5 10 15 20 25 30
)
Reverse voltage VR (V
)
2
SKH00057BED
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