Panasonic MA4X726, MA726 User Manual

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA4X726 (MA726)

Silicon epitaxial planar type

For super high speed switching

For small current rectification

■ Features

•

Two isolated elements are contained in one package, allowing
high-density mounting

•

Two MA3X721 (MA721) is contained in one package (two
diodes in a different direction)

•

Forward current (Average) I

= 200 mA rectification is

F(AV)

possible

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

Peak forward Single I

1

current Series

*

Forward current Single I

1

(Average) Series

*

Non-repetitive peak Single I

forward surge current

*

2

Series

1

*

Junction temperature T

Storage temperature T

R

RRM

FM

  225

F(AV)

  150

FSM

  0.75

j

stg

Note)*1: Value of each diode in series diodes used.

2:

The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

*

30 V

30 V

300 mA

200 mA

1.00 A

150 °C

−55 to +150 °C

+0.2

+0.3

–0.3

2.8

–0.1

1.1

Unit: mm

+0.1

0.16

–0.06

5˚

1: Cathode 1

0.60

+0.02

2.90

–0.05

1.9

±0.2

(0.95)(0.95)

34

21

(0.2)

+0.10
–0.05

10˚

0.5R

+0.25

+0.2

1.1

–0.05

1.50

(0.65)

–0.1

2: Anode 2
3: Cathode 2

0 to 0.1

4: Anode 1

EIAJ: SC-61 Mini4-G1 Package

Marking Symbol: M1O

Internal Connection

4

3

1

2

±0.2

0.4

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Terminal capacitance C

Reverse recovery time

*

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 1 GHz. 4. *: trr measurement circuit

Bias Application Unit (N-50BU)

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Publication date: February 2005 SKH00106CED

A

F

R

t

t

rr

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

IF = 200 mA 0.55 V

VR = 30 V 50 µA

VR = 0 V, f = 1 MHz 30 pF

IF = IR = 100 mA 3.0 ns
Irr = 10 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

t

p

t

r

δ = 0.05

= 2 µs

= 0.35 ns

t

I

F

I

= 100 mA

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

= 10 mA

I

rr

t

Note) The part number in the parenthesis shows conventional part number.

1

MA4X726

This product complies with the RoHS Directive (EU 2002/95/EC).

= 150°C

IF  V

100°C

3

10

2

T

a

10

)

mA
(

F

10

1

Forward current I

−1

10

−2

10

0 0.80.2 0.4 0.6

Forward voltage VF (V

5

10

4

10

)

µA

(

R

3

10

2

10

IR  T

25°C

−20°C

F

5

10

4

10

)
µA

(

R

3

10

2

10

Reverse current I

10

1

0 5 10 15 20 25 30

)

a

= 30 V

V

R

5 V
1 V

40

)

pF

30

(

t

20

IR  V

R

T

a

Reverse voltage VR (V

Ct  V

R

f = 1 MHz
T

a

= 150°C

100°C

)

= 25°C

25°C

0.5

0.4

)
V

(

F

0.3

0.2

Forward voltage V

0.1

0

−40 0 40 80 120 160 200

VF  T

a

= 200 mA

I

F

100 mA

10 mA

Ambient temperature Ta (°C

)

Reverse current I

10

1

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

10

Terminal capacitance C

0

)

0 5 10 15 20 25 30

Reverse voltage VR (V

)

2

SKH00106CED