Panasonic MA721 User Manual

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA3X721 (MA721)

Silicon epitaxial planar type

For super high speed switching

For small current rectification

■ Features

• Forward current (Average) I
possible

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage

Forward current I

Peak forward current I

Non-repetitive peak forward I
surge current

Junction temperature T

Storage temperature T

Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)

*

= 200 mA rectification is

F(AV)

30 V

30 V

200 mA

300 mA

1A

150 °C

−55 to +150 °C

V

R

RM

F

FM

FSM

j

stg

Unit: mm

+0.10

0.40

10˚

3

1

(0.95) (0.95)

1.9

±0.1

+0.20

2.90

–0.05

–0.05

+0.25

–0.05

+0.2

–0.3

2.8

1.50

2

(0.65)

+0.2

–0.1

+0.3

1.1

1.1

0 to 0.1

+0.10

0.16

–0.06

5˚

–0.1

1: Anode
2: N.C.
3: Cathode

EIAJ: SC-59 Mini3-G1 Package

Marking Symbol: M1M

Internal Connection

3

0.4±0.2

12

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

F

R

Terminal capacitance C

Reverse recovery time

*

t

rr

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

  3. Absolute frequency of input and output is 1 GHz.

4.*: trr measurement circuit

Bias Application Unit (N-50BU)

A

Pulse Generator
(PG-10N)

= 50 Ω

R

s

Publication date: April 2004 SKH00080CED

IF = 200 mA 0.55 V

VR = 30 V 50 µA

VR = 0 V, f = 1 MHz 30 pF

t

IF = IR = 100 mA 3.0 ns
Irr = 10 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

Note) The part number in the parenthesis shows conventional part number.

r

10%

90%

V

R

t

p

= 0.35 ns

t

r

δ = 0.05

= 2 µs

t

I

F

I

= 100 mA

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

= 10 mA

I

rr

t

1

MA3X721

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

3

10

2

10

= 150°C

T

a

)

mA
(

F

10

1

Forward current I

−1

10

−2

10

0 0.1 0.2 0.3 0.4 0.5 0.6

F

100°C 25°C

Forward voltage VF (V

IR  T

5

10

4

10

)

µA

(

R

3

10

2

10

a

−20°C

V

R

)

= 30 V

10 V
5 V

IR  V

5

10

4

10

R

= 150°C

T

a

)
µA

3

(

10

R

2

10

10

Reverse current I

1

−1

10

0102030

Reverse voltage VR (V

32

)
pF

24

(

t

16

Ct  V

R

100°C

25°C

)

f = 1 MHz

= 25°C

T

a

VF  T

0.5

0.4

)
V

(

F

0.3

0.2

a

I

F

Forward voltage V

0.1

0

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

= 200 mA

100 mA

1 mA

)

Reverse current I

10

1

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

8

Terminal capacitance C

0

0 5 10 15 20 25 30

)

Reverse voltage VR (V

)

2

SKH00080CED