Panasonic MA718 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6X718 (MA718)
Silicon epitaxial planar type
For switching
For wave detection
■ Features
•
Three isolated elements are contained in one package, allowing
high-density mounting
•
Two MA3X704A (MA704A) is contained in one package (of a
type in the same direction)
•
Forward voltage V
•
Optimum for high frequency rectification because of its short
reverse recovery time t
, optimum for low voltage rectification
F
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Peak forward current
Forward current
*
*
Junction temperature T
Storage temperature T
Note)*: Value for single diode
R
I
FM
I
F
j
stg
30 V
150 mA
30 mA
125 °C
−55 to +125 °C
–0.3
2.8
–0.1
1.1
Unit: mm
+0.10
0.16
–0.06
5˚
1 : Cathode 1
2 : Cathode 2
10˚
0.30
0.50
2.90
(0.95)
+0.10
–0.05
+0.10
–0.05
1.9
+0.20
–0.05
±0.1
(0.95)
654
+0.2
+0.25
–0.05
1.50
132
(0.65)
+0.2
–0.1
+0.3
1.1
3 : Cathode 3
4 : Anode 3
0 to 0.1
5 : Anode 2
6 : Anode 1
EIAJ : SC-74 Mini6-G1 Package
Marking Symbol: M2N
Internal Connection
654
±0.2
0.4
■ Electrical Characteristics Ta = 25°C ± 3°C
123
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
Terminal capacitance C
Reverse recovery time
*
F1
V
F2
R
t
rr
IF = 1 mA 0.4 V
IF = 30 mA 1.0
VR = 30 V 1 µA
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA , RL = 100 Ω
Detection efficiency η V
= 3 V
IN
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz.
4.*: t
measurement circuit
rr
Publication date: April 2004 SKH00112BED
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Input Pulse Output Pulse
t
t
p
r
V
R
Note) The part number in the parenthesis shows conventional part number.
10%
90%
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
rr
I
F
I
F
I
R
R
= 10 mA
= 10 mA
= 100 Ω
L
I
rr
= 1 mA
t
1
MA6X718
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
Forward current I
= 125°C
T
a
10
1
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
75°C 25°C
−20°C
Forward voltage VF (V
IR T
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
a
V
3 V
1 V
)
= 30 V
R
IR V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
R
Reverse voltage VR (V
Ct V
2.4
2.0
)
pF
(
t
1.6
1.2
0.8
Terminal capacitance C
0.4
R
f = 1 MHz
T
T
a
a
= 125°C
)
= 25°C
75°C
25°C
VF T
1.0
0.8
)
V
(
F
0.6
0.4
a
Forward voltage V
0.2
0
−40 0 40 80 120 160
Ambient temperature Ta (°C
= 30 mA
I
F
10 mA
1 mA
)
−2
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
)
0 5 10 15 20 25 30
Reverse voltage VR (V
)
SKH00112BED
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