Panasonic MA3X715, MA715 User Manual
Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3X715 (MA715)
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Low forward voltage V
• Optimum for high frequency rectification because of its short
reverse recovery time t
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Forward current Single I
Peak forward Single I
current Series 110
Junction temperature T
Storage temperature T
F
rr
R
V
RM
F
30 V
30 V
30 mA
Series 20
FM
j
stg
150 mA
125 °C
−55 to +125 °C
Unit: mm
+0.10
0.40
10˚
3
1
(0.95) (0.95)
1.9
±0.1
+0.20
2.90
–0.05
–0.05
+0.25
–0.05
+0.2
–0.3
2.8
1.50
2
(0.65)
+0.2
–0.1
+0.3
–0.1
1.1
1.1
+0.10
0.16
–0.06
5˚
1: Anode 1
0 to 0.1
2: Cathode 2
3: Cathode 1
Anode 2
EIAJ: SC-59 Mini3-G1 Package
Marking Symbol: M2Y
Internal Connection
3
0.4±0.2
12
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz. 4.
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
i
IF = 1 mA 0.3 V
IF = 30 mA 1.0
VR = 30 V 30 µA
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
= 3 V
IN
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
: t
measurement circuit
*
rr
Input Pulse Output Pulse
t
t
p
= 50 Ω
r
10%
V
R
t
t
δ = 0.05
Note) The part number in the parenthesis shows conventional part number.
90%
= 2 µs
p
= 0.35 ns
r
t
t
rr
I
F
I
F
I
R
R
L
= 10 mA
= 10 mA
= 100 Ω
I
rr
= 1 mA
t
Publication date: February 2005 SKH00075DED
1
MA3X715
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
Ta = 125°C
10
)
A
(m
10
F
1
−1
10
F
75°C
25°C
−20°C
Forward current I
−2
10
−3
10
0 0.8 1.6 2.4
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
a
VR = 30 V
Reverse current I
1
3 V
1 V
IR V
Ct V
R
Ta = 125°C
75°C
25°C
R
f = 1 MHz
T
a
)
= 25°C
0.8
)
V
(
0.6
F
0.4
Forward voltage V
0.2
0
−40 40 120
2
10
)
A
(
10
F(surge)
1
Forward surge current I
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
)
0102030
Reverse voltage VR (V
2.0
)
pF
(
t
1.0
Terminal capacitance C
VF T
a
IF = 30 mA
10 mA
1 mA
Ambient temperature Ta (°C
I
t
F(surge)
W
= 25°C
T
a
I
t
W
Non-repetitive
)
F(surge)
−1
10
−40 40 120 200
Ambient temperature Ta
2
(°C)
0
0102030
Reverse voltage VR (V
)
SKH00075DED
−1
10
−2
10
−1
110
1010
Pulse width tW (ms
2
)
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