Panasonic MA4X714, MA714 User Manual

Schottky Barrier Diodes (SBD)

Bias Application Unit (N-50BU)

90%

Pulse Generator
(PG-10N)
R

s

= 50 Ω

Wave Form Analyzer
(SAS-8130)
R

i

= 50 Ω

t

p

= 2 µs

t

r

= 0.35 ns

δ = 0.05

I

F

= 10 mA

I

R

= 10 mA

R

L

= 100 Ω

10%

Input Pulse Output Pulse

I

rr

= 1 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

This product complies with the RoHS Directive (EU 2002/95/EC).

MA4X714 (MA714)

Silicon epitaxial planar type

+0.2

–0.3

2.8

+0.3

–0.1

1.1

4

1

Unit: mm

+0.1

0.16

–0.06

5˚

1: Cathode 1
2: Anode 2
3: Cathode 2
4: Anode 1

For switching

For wave detection

■ Features

•

Two isolated elements are contained in one package, allowing
high-density mounting

•

Two MA3X704A (MA704A) is contained in one package (two
diodes in a different direction)

•

Forward voltage V

•

Optimum for high frequency rectification because of its short
reverse recovery time t

, optimum for low voltage rectification

F

rr

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage

Peak forward Single I

current Series

*

  110

Forward current Single I

*

Series

  20

Junction temperature T

Storage temperature T

R

V

RM

FM

F

j

stg

Note)*: Value of each diode in series diodes used.

30 V

30 V

150 mA

30 mA

125 °C

−55 to +125 °C

+0.02

2.90

–0.05

1.9

±0.2

(0.95)(0.95)

34

+0.25

–0.05

0.5R

1.50

21

(0.2)

+0.10

0.60

–0.05

10˚

(0.65)

+0.2

–0.1

1.1

0 to 0.1

EIAJ: SC-61 Mini4-G1 Package

Marking Symbol: M1P

Internal Connection

3

2

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

F1

V

F2

R

Terminal capacitance C

Reverse recovery time

*

t

rr

Detection efficiency η V

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 2 GHz. 4. *: t

IF = 1 mA 0.4 V

IF = 30 mA 1.0

VR = 30 V 1 µA

VR = 1 V, f = 1 MHz 1.5 pF

t

IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω

= 3 V

IN

, f = 30 MHz 65 %

(peak)

RL = 3.9 kΩ, CL = 10 pF

measurement circuit

rr

±0.2

0.4

Publication date: February 2005 SKH00104CED

Note) The part number in the parenthesis shows conventional part number.

1

MA4X714

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

= 125°C

a

F

75°C 25°C

3

10

2

10

)

mA
(

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

T

Forward voltage VF (V

IR  T

3

10

2

10

)

µA

(

R

10

1

Reverse current I

−1

10

a

V
15 V

−20°C

)

= 30 V

R

IR  V

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

0 5 10 15 20 25 30

R

Reverse voltage VR (V

Ct  V

2.4

)
pF

(

t

1.6

0.8

R

Terminal capacitance C

= 125°C

T

a

75°C

25°C

)

f = 1 MHz

= 25°C

T

a

VF  T

1.0

0.8

)
V

(

F

0.6

0.4

a

I

Forward voltage V

0.2

0

−40 0 40 80 120 160

Ambient temperature Ta (°C

= 30 mA

F

3 mA

1 mA

)

−2

10

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

2

0

0 5 10 15 20 25 30

)

Reverse voltage VR (V

)

SKH00104CED