Schottky Barrier Diodes (SBD)
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6Z718 (MA6S718)
Silicon epitaxial planar type
For switching
■ Features
•
Three isolated elements are contained in one package, allowing
high-density mounting
•
Forward voltage V
•
Optimum for high frequency rectification because of its short
reverse recovery time t
, optimum for low voltage rectification
F
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Peak forward current
Forward current
*
*
Junction temperature T
Storage temperature T
Note)*: Value for single diode
R
V
RM
I
FM
I
F
j
stg
30 V
30 V
150 mA
30 mA
125 °C
−55 to +125 °C
±0.1
2.0
(0.65)(0.65)
654
123
5˚
0.2
0 to 0.1
±0.1
1.25
±0.05
±0.1
2.1
5˚
0.7
(0.425)
0.16
1: Anode 1 4: Cathode 3
2: Anode 2 5: Cathode 2
3: Anode 3 6: Cathode 1
EIAJ: SC-88 SMini6-F1 Package
Marking Symbol: M2N
Internal Connection
65 4
Unit: mm
±0.1
+0.10
–0.06
(0.15)
■ Electrical Characteristics Ta = 25°C ± 3°C
123
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F1
V
F2
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η V
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz. 4.
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: April 2004 SKH00114BED
Wave Form Analyzer
(SAS-8130)
R
i
IF = 1 mA 0.4 V
IF = 30 mA 1.0
VR = 30 V 1 µA
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1.0 ns
Irr = 1 mA, RL = 100 Ω
= 3 V
IN
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
measurement circuit
: t
*
rr
Input Pulse Output Pulse
t
t
p
= 50 Ω
r
10%
V
R
t
t
δ = 0.05
Note) The part number in the parenthesis shows conventional part number.
90%
= 2 µs
p
= 0.35 ns
r
t
t
rr
I
F
I
F
I
R
R
L
= 10 mA
= 10 mA
= 100 Ω
I
rr
= 1 mA
t
1
MA6Z718
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
–1
10
–2
10
Ta = 125°C
0 0.4 0.8 1.2
F
75°C 25°C
Forward voltage VF (V
IR T
2
10
)
10
A
(µ
R
1
a
−20°C
)
VR = 30 V
10 V
1 V
IR V
3
10
2
10
)
µA
(
R
10
1
Reverse current I
−1
10
−2
10
0 5 10 15 20 25 30
R
Reverse voltage VR (V
Ct V
3.0
)
pF
(
t
2.0
R
Ta = 125°C
75°C
25°C
)
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
IF = 30 mA
3 mA
1 mA
Ambient temperature Ta (°C
I
t
10
)
A
(
10
F(surge)
3
2
10
F(surge)
W
Ta = 25°C
t
)
I
F(surge)
W
−1
Reverse current I
10
−2
10
−40 40 120 200
Ambient temperature Ta (°C
1.0
Terminal capacitance C
1
Forward surge current I
0
)
0102030
Reverse voltage VR (V
)
−1
10
−1
10
110
Pulse width tW (ms
)
2
SKH00114BED