Panasonic MA6Z718 Datasheet
Schottky Barrier Diodes (SBD)
MA6S718
Silicon epitaxial planar type
For switching circuits
■ Features
•
Small S-mini type 6-pin package
•
Non connected three elements incorporated in one package,
allowing high-density mounting
•
Flat lead type package, resulting in promotion of the actual
mounting ratio and solderability with a high-speed mounter
•
Optimum for low-voltage rectification because of its low forward
rise voltage (V
•
Optimum for high-frequency rectification because of its short reverse recovery time (t
)
F
)
rr
Unit : mm
2.1 ± 0.1
1.25 ± 0.1
1
0.650.65
2.0 ± 0.1
3
0.7 ± 0.1
6
52
4
0.2 ± 0.05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Peak forward current
Forward current (DC)
*
*
Junction temperature T
Storage temperature T
Note) * : Value in per diode
R
RM
I
FM
I
F
j
stg
150 mA
125 °C
−55 to +125 °C
30 V
30 V
30 mA
Marking Symbol: M2N
Internal Connection
1 : Anode 1
2 : Anode 2
3 : Anode 3
S-Mini Type Package (6-pin)
1
2
3
6
5
4
4 : Cathode 3
5 : Cathode 2
6 : Cathode 1
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Detection efficiency η Vin = 3 V
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment
2. Rated input/output frequency: 2 000 MHz
3. * : trr measuring instrument
Pulse Generator
(PG-10N)
R
Bias Applicaiton Unit N-50BU
A
= 50 Ω
s
VR = 30 V 1 µA
IF = 1 mA 0.4 V
IF = 30 mA 1 V
VR = 1 V, f = 1 MHz 1.5 pF
t
IF = IR = 10 mA 1 ns
Irr = 1 mA, RL = 100 Ω
, f = 30 MHz 65 %
(peak)
RL = 3.9 kΩ, CL = 10 pF
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
t
p
= 0.35 ns
t
r
δ = 0.05
= 2 µs
t
I
F
= 10 mA
I
F
= 10 mA
I
R
= 100 Ω
R
L
t
rr
I
= 1 mA
rr
t
1
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