Panasonic MA6Z121 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6Z121 (MA6S121)
Silicon epitaxial planar type
For switching circuit
■ Features
• Three isolated elements contained in one package, allowing highdensity mounting
• Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
• Short reverse recovery time t
• Small terminal capacitance C
rr
t
±0.1
2.0
(0.65)(0.65)
654
123
5˚
0.2
±0.1
1.25
±0.05
±0.1
2.1
Unit: mm
0.7
±0.1
0.16
(0.425)
+0.10
–0.06
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
1
Forward current
Peak forward current
Non-repetitive peak forward I
surge current
*
1
*
1, 2
*
Junction temperature T
Storage temperature T
Note)*1: Value for single diode
2: t = 1 s
*
I
FSM
R
RM
I
F
FM
j
−55 to +150 °C
stg
100 mA
225 mA
500 mA
150 °C
80 V
80 V
1: Anode 1 4: Cathode 3
2: Anode 2 5: Cathode 2
3: Anode 3 6: Cathode 1
EIAJ: SC-88 SMini6-F1 Package
Marking Symbol: M2D
Internal Connection
0 to 0.1
456
321
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Note) The part number in the parenthesis shows conventional part number.
(0.15)
Publication date: March 2004 SKF00059BED
1
MA6Z121
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
= 150°C
T
)
a
mA
(
Forward current I
100°C
F
10
10
25°C
10
−20°C
1
−1
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
a
= 75 V
V
R
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
35 V
6 V
IR V
Ct V
R
R
= 150°C
T
a
100°C
25°C
f = 1 MHz
= 25°C
T
a
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
)
3
10
)
A
(
2
10
F(surge)
10
1
Forward surge current I
5
10
4
10
)
A
(n
R
3
10
2
10
Reverse current I
10
1
)
0 20 40 60 80 100 120
Reverse voltage VR (V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
VF T
a
= 100 mA
I
F
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F(surge)
W
= 25°C
T
a
I
F(surge)
t
W
Non repetitive
)
1
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
−1
0
0 20406080100120
)
Reverse voltage VR (V
)
10
−1
Pulse width tW (ms
10110
)
SKF00059BED
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