Panasonic MA6X718 Datasheet

Schottky Barrier Diodes (SBD)

2.8

+ 0.2

− 0.3

1.5

+ 0.25

− 0.05

0.65 ± 0.15 0.65 ± 0.15

1

6

5

4

3

2

1.45 ± 0.1

0.95 0.95

1.9 ± 0.1

0.3

+ 0.1

− 0.05

0.5

+ 0.1

− 0.05

2.9

+ 0.2

− 0.05

1.1

+ 0.2

− 0.1

0.8

0.4 ± 0.2

0 to 0.05

0.16

+ 0.1

− 0.06

0.1 to 0.3

MA6X718

Silicon epitaxial planar type

For switching circuits

For wave detection circuit

■ Features

•

Three MA3X704As in the same direction are contained in one
package

•

Optimum for low-voltage rectification because of its low forward
rise voltage (V

•

Optimum for high-frequency rectification because of its short re­verse recovery time (t

)

F

)

rr

Unit : mm

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak forward current

Forward current (DC)

Junction temperature T

Storage temperature T

Note) * : Value in per diode

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Terminal capacitance C

Reverse recovery time

Detection efficiency η Vin = 3 V

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment

  2. Rated input/output frequency: 2 000 MHz

3. * : trr measuring instrument

1 : Cathode 1
2 : Cathode 2

*

*

R

I

FM

I

F

j

stg

30 V

150 mA

30 mA

125 °C

−55 to +125 °C

Marking Symbol: M2N

Internal Connection

3 : Cathode 3

Mini Type Package (6-pin)

6

5

4

R

F1

V

F2

*

t

rr

VR = 30 V 1 µA

IF = 1 mA 0.4 V

IF = 30 mA 1.0 V

VR = 1 V, f = 1 MHz 1.5 pF

t

IF = IR = 10 mA 1.0 ns

4 : Anode 3
5 : Anode 2
6 : Anode 1

1

2

3

Irr = 1 mA, RL = 100 Ω

, f = 30 MHz 65 %

(peak)

RL = 3.9 kΩ, CL = 10 pF

Bias Application Unit N-50BU

Pulse Generator
(PG-10N)

= 50 Ω

R

s

A

W.F.Analyzer
(SAS-8130)

= 50 Ω

R

i

Input Pulse Output Pulse

t

t

p

r

10%

90%

V

R

t

p

= 0.35 ns

t

r

δ = 0.05

t

= 2 µs

I

F

= 10 mA

I

F

= 10 mA

I

R

= 100 Ω

R

L

t

rr

I

= 1 mA

rr

t

1

MA6X718

Schottky Barrier Diodes (SBD)

IF  V

3

10

2

10

)

mA
(

Ta = 125°C

F

10

1

Forward current I

−1

10

−2

10

0 0.2 0.4 0.6 0.8 1.0 1.2

F

Forward voltage VF (V

Ct  V

2.4

2.0

)
pF

(

t

1.6

1.2

0.8

Terminal capacitance C

0.4

R

75°C 25°C

− 20°C

f = 1 MHz

= 25°C

T

a

VF  T

IR  T

a

a

IF = 30 mA

10 mA

1 mA

VR = 30 V

3 V
1 V

)

1.0

0.8

)
V

(

F

0.6

0.4

Forward voltage V

0.2

0

)

−40 0 40 80 120 160

Ambient temperature Ta (°C

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

3

10

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

0 5 10 15 20 25 30

IR  V

R

Ta = 125°C

Ambient temperature VR (V

75°C

25°C

)

0

0 5 10 15 20 25 30

Reverse voltage VR (V

2

−2

10

)

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

)