Panasonic MA6X344 Datasheet

Variable Capacitance Diodes

6

5

4

1

2

3

MA6X344

Silicon epitaxial planar type

For UHF and VHF electronic tuners

■ Features

•

Three isolated elements contained in one package

•

Large capacitance variation ratio

•

Small series resistance r

•

Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Peak reverse voltage V

Forward current (DC) I

Junction temperature T

Storage temperature T

D

R

RM

F

j

stg

30 V

34 V

20 mA

150 °C

−55 to +150 °C

+ 0.2

2.8

− 0.3

+ 0.25

− 0.05

0.65 ± 0.15 0.65 ± 0.15

− 0.05

+ 0.2

2.9

1.9 ± 0.1

− 0.1

+ 0.2

0.8

1.1

0.1 to 0.3

0.4 ± 0.2

1.5

6

5

4

0.95 0.95

1：Cathode 1 4：Anode 3
2：Cathode 2 5：Anode 2
3：Cathode 3 6：Anode 1

Mini Type Package (6-pin)

Marking Symbol: 5P

Internal Connection

0 to 0.05

1

2

3

Unit : mm

− 0.05

+ 0.1

− 0.05

+ 0.1

0.5

0.3

− 0.06

+ 0.1

0.16

1.45 ± 0.1

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Diode capacitance C

Capacitance ratio

Capacitance difference

Diode capacitance deviation

2

Series resistance

*

R

D(3V)

C

D(25V)

C

D(10V)

C

D(17V)

C

D(3V)/CD(25V)

C

D(17V)/CD(25V)

∆C

r

D

Note) 1．Rated input/output frequency: 470 MHz

2．2. Each characteristic is a standard for each diode.

3. *1: Diode capacitance deviation is controlled to 2% for the rank B and 3% or less for the rank G.

*2:rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER

VR = 30 V 10 nA

VR = 3 V, f = 1 MHz 11.233 12.781 pF

VR = 25 V, f = 1 MHz 2.020 2.367 pF

VR = 10 V, f = 1 MHz 4.358 5.422 pF

VR = 17 V, f = 1 MHz 2.567 3.100 pF

4.60 6.15 

0.37 pF

1

C

D(3V)(10V)(17V)(25V)

Note)

*

%

CD = 9 pF, f = 470 MHz 0.55 0.75 Ω

1

MA6X344

Variable Capacitance Diodes

100

CD  V

50

)
pF

30

(

D

20

10

5

3

Diode capacitance C

2

1

0 8 16 24 324 1220283640

R

f = 1 MHz
T

a

Reverse voltage VR (V

IR  T

2

10

)

10

nA

(

R

1

a

VR = 30 V

= 25°C

)

IF  V

120

100

F

)

mA
(

80

F

60

40

Ta = 60°C

25°C

Forward current I

20

0

0 0.2 0.4 0.6 0.8 1.0 1.2

Forward voltage VF (V

− 40°C

)

1.03

CD  T

1.02

1.01

)

)

a

T
(

1.00

= 25°C

D

a

C

T

(

D

C

0.99

0.98

0.97
0 20 40 60 80 100

Ambient temperature Ta (°C

a

f = 1 MHz

VR = 3 V

10 V
17 V
25 V

)

−1

10

Reverse current I

−2

10

0 40 80 120 16020 60 100 140

Ambient temperature Ta (°C

CD rank classification

2.030

11.290

11.806

12.345

(pF)

12.718

D(3V)

C

2.091

C

)

D(25V)

(pF)

2.253

2.356

(pF)

D(10V)

C

4.380

4.934

5.395

Secondary rank classificationPrimary rank classification

2.580

2.738

C

D(17V)

(pF)

3.085

2