Rectifier Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6X129 (MA129)
Silicon epitaxial planar type
For small power current rectification
■ Features
• Three isolated elements are contained in one package, allowing
high-density mounting
• Allowing high voltage rectification
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Output current Single I
Triple 100
Repetitive peak forward
current
Non-repetitive peak
forward surge current
Single I
Triple 200
Single I
*
Triple 350
Junction temperature T
Storage temperature T
Note)*: t = l s
R
RM
O
FRM
FSM
j
stg
200 V
200 V
200 mA
600 mA
1 000 mA
150 °C
−55 ∼ +150 °C
+0.20
2.90
–0.05
±0.1
1.9
(0.95)
(0.95)
654
+0.25
–0.05
+0.2
1.50
132
+0.10
0.30
–0.05
+0.10
0.50
–0.05
10˚
EIAJ : SC-74 Mini6-G1 Package
(0.65)
+0.2
–0.1
+0.3
1.1
0 to 0.1
1 : Cathode 1 4 : Anode 3
2 : Cathode 2 5 : Anode 2
3 : Cathode 3 6 : Anode 1
Unit: mm
+0.10
0.16
–0.06
–0.3
2.8
5˚
–0.1
1.1
Marking Symbol: M4F
Internal Connection
6
5 2
4
1
3
±0.2
0.4
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R
Terminal capacitance C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 3 MHz.
Publication date: March 2004 SKC00003BED
IF = 200 mA 1.2 V
VR = 200 V 200 nA
VR = 0 V, f = 1 MHz 4.5 pF
t
Note) The part number in the parenthesis shows conventional part number.
1
MA6X129
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
Ta = 150°C
(mA)
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
100°C 25°C
Forward voltage VF (V)
IR T
2
10
10
)
nA
(
R
1
−1
10
Reverse current I
−2
10
a
VR = 200 V 100 V
−20°C
10 V
VF T
a
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
IF = 200 mA
Ambient temperature Ta (°C
Ct V
R
6
5
(pF)
t
4
3
2
Terminal capacitance C
1
10 mA
3 mA
IR V
2
10
10
)
nA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
)
0 40 80 120 160 200 240
Reverse voltage VR (V
I
F(surge)
(A)
F(surge)
3
10
2
10
10
1
R
Ta = 150°C
100°C
25°C
t
W
Ta = 25°C
I
F(surge)
t
W
Breakdown pint (typ.
)
)
Forward surge current I
−3
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°C
2
0
0 50 100 150 200 250 300
)
Reverse voltage VR (V
)
−1
10
−1
10
110
Pulse width tW (ms)
SKC00003BED