Panasonic MA6X129 Datasheet

Rectifier Diodes
MA6X129
Silicon epitaxial planar type
For small power current rectification
Features
Three isolated elements contained in one package, allowing high­density mounting
Allowing high voltage rectification
1
2
3
Unit : mm
+ 0.1
0.05
+ 0.1
0.05
0.5
0.3
+ 0.2
2.8
0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
6
5
+ 0.2
0.05
2.9
1.9 ± 0.2
4
0.95 0.95
0.05
1.45 ± 0.1
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Output current Single I
R
RM
O
200 V
200 V
100 mA
Triple 200
Repetitive peak
forward current
Non-repetitive peak
forward surge current
Single I
Triple 600
Single I
*
Triple 1 000
Junction temperature T
Storage temperature T
FRM
FSM
j
stg
200 mA
350 mA
150 °C
55 to +150 °C
Note) * : t = l s
Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Terminal capacitance C
Note) Rated input/output frequency: 3 MHz
R
F
t
+ 0.1
+ 0.2
0.1
1.1
0.1 to 0.3
0.4 ± 0.2
0.8
0 to 0.1
0.06
0.16
1:Cathode 1 4:Anode 1 2:Cathode 2 5:Anode 2 3:Cathode 3 6:Anode 3
Mini Type Package (6-pin)
Marking Symbol: M4F
Internal Connection
6
5 2
4
VR = 200 V 0.2 µA
IF = 200 mA 1.2 V
VR = 0 V, f = 1 MHz 4.5 pF
1
3
1
MA6X129
Rectifier Diodes
V
1 000
100
)
mA (
F
10
1
Forward current I
0.1
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2
Ta = 150°C
F
100°C 25°C
Forward voltage VF (V
T
100
10
)
nA
(
R
1
0.1
Reverse current I
0.01
0.001
40 0 40 80 120 160 200
a
VR = 200 V
Ambient temperature Ta (°C
20°C
)
100 V 10 V
VF T
Ct V
a IF
IF = 200 mA
10 mA
3 mA
)
R IR
)
1.6
1.4
)
1.2
V (
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
40 0 40 80 120 160 200
Ambient temperature Ta (°C
6
5
) pF
(
t
4
3
2
Terminal capacitance C
1
0
0 50 100 150 200 250 300
)
Reverse voltage VR (V
100
10
) nA
(
R
1
0.1
Reverse current I
0.01
0.001 0 40 80 120 160 200 240
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03 30
IR V
R
Ta = 150°C
Reverse voltage VR (V
I
t
F(surge)
0.1 1 10 6030.3
W
Ta = 25°C
t
Breakdown point (typ)
Pulse width tW (ms
100°C
25°C
)
I
F(surge)
W
)
2
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