Panasonic MA6X128 Datasheet
2.8
+ 0.2
− 0.3
1.5
+ 0.25
− 0.050.65 ± 0.15 0.65 ± 0.15
1
6
5
4
3
2
1.45
0.95 0.95
1.9 ± 0.2
0.3
+ 0.1
− 0.05
2.9
+ 0.2
− 0.05
1.1
+ 0.2
− 0.1
0.8
0.4 ± 0.2
0 to 0.1
0.16
+ 0.1
− 0.06
0.1 to 0.3
Switching Diodes
MA6X128
Silicon epitaxial planar type
For switching circuits
■ Features
•
Four-element contained in one package, allowing high-density
mounting
•
Centrosymmetrical wiring, allowing to free from the taping direction
•
The mirror image wiring of (MA6X123)
•
Short reverse recovery time t
•
Small terminal capacitance, C
•
High breakdown voltage (V
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC)
Peak forward current
*
1
*
Non-repetitive peak forward I
1,2
surge current
*
Junction temperature T
Storage temperature T
Note) *1: Value for single diode
*2:t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Pulse Generator
(PG-10N)
= 50 Ω
R
s
*
Reverse recovery time
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
R
1
Bias Application Unit N-50BU
A
rr
t
= 80 V)
R
RM
I
F
I
FM
FSM
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
R
t
rr
VR = 75 V 100 nA
IF = 100 mA 1.2 V
F
IR = 100 µA80V
R
VR = 0 V, f = 1 MHz 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 · IR, RL = 100 Ω
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
Marking Symbol: M2V
Internal Connection
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
Unit : mm
1 : Cathode 3,4 4 : Cathode 1,2
2 : Anode 1 5 : Anode 3
3 : Anode 2 6 : Anode 4
Mini Type Package (6-pin)
I
F
6
5
4
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
I
rr
= 0.1 · I
rr
1
2
3
t
R
1
MA6X128
Switching Diodes
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Ta = 150°C
Forward voltage VF (V
T
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160 200
a
VR = 75 V
Ambient temperature Ta (°C
100°C
25°C
− 20°C
)
35 V
1 V
IR V
Ta = 150°C
Ct V
R
100°C
25°C
R IR
)
f = 1 MHz
= 25°C
T
a
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
1 000
)
300
A
(
100
F (surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
100
10
)
µA
(
R
1
0.1
Reverse current I
0.01
0.001
0 20406080100120
Reverse voltage VR (V
1.2
1.0
(pF)
t
0.8
0.6
0.4
Terminal capacitance C
0.2
0
)
0 20406080100120
Reverse voltage VR (V
VF T
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F(surge)
0.3 3 301010.1
Pulse width tW (ms
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
)
2
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