Panasonic MA6X126 Datasheet
Switching Diodes
MA6X126
Silicon epitaxial planar type
For switching circuits
■ Features
•
Four-element contained in one package, allowing high-density
mounting
•
High breakdown voltage (V
= 80 V)
R
Unit : mm
+ 0.2
2.8
− 0.3
+ 0.25
0.95 0.95
1.5
− 0.05
6
5
4
1
+ 0.1
− 0.05
+ 0.1
− 0.05
0.5
0.3
2
3
0.65 ± 0.15 0.65 ± 0.15
+ 0.2
− 0.05
2.9
1.9 ± 0.2
1.45 ± 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
1
Average forward current
Peak forward current
*
1
*
Non-repetitive peak forward I
1,2
surge current
*
Junction temperature T
Storage temperature T
I
F(AV)
I
R
RM
FM
FSM
j
−55 to +150 °C
stg
100 mA
225 mA
500 mA
150 °C
Note) *1: Value for single diode
*2:t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
3
Reverse recovery time
*
Note) 1. Rated input/output frequency: 100 MHz
2. *1: Between pins 1 and 5, Between pins 1 and 6
*2: Between pins 4 and 2, Between pins 4 and 3
*3:trr measuring circuit
Pulse Generator
(PG-10N)
= 50 Ω
R
s
R
F
R
1
*
t1
2
*
C
t2
*1
t
rr1
*2
t
rr2
Bias Application Unit N-50BU
A
W.F.Analyzer
(SAS-8130)
R
+ 0.1
− 0.06
0.16
0 to 0.1
80 V
80 V
+ 0.2
− 0.1
1.1
0.1 to 0.3
0.4 ± 0.2
0.8
1 : Anode 3,4 4 : Cathode 1,2
2 : Anode 1 5 : Cathode 3
3 : Anode 2 6 : Cathode 4
Mini Type Package (6-pin)
Marking Symbol: M2S
Internal Connection
6
5
4
VR = 75 V 100 nA
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 0 V, f = 1 MHz 15 pF
VR = 0 V, f = 1 MHz 2 pF
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
= 50 Ω
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
1
2
3
3
t
R
1
MA6X126
Switching Diodes
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Between pins 1 and 5, 1 and 6
C
Ta = 150°
C
100°
C
25°
C
− 20°
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR V
100
10
)
µA
(
R
1
0.1
Reverse current I
0.01
0.001
0 20406080100120
Between pins 2 and 4, 3 and 4
R
Ta = 150°C
100°C
25°C
Reverse voltage VR (V
IF V
VF T
F
= 150°
T
a
100°
− 20°
a
IF = 100 mA
10 mA
3 mA
25°
10
1
)
µA
(
R
−1
10
C
C
C
C
−2
10
Reverse current I
−3
10
−4
10
0 20406080100120
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
)
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
)
Between pins 2 and 4, 3 and 4
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
Between pins 1 and 5, 1 and 6
Ambient temperature Ta (°C
IR V
R
Ta = 150°C
100°C
25°C
Between pins 1 and 5, 1 and 6
Reverse voltage VR (V
VF T
Between pins 2 and 4, 3 and 4
)
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
)
IR T
10
1
)
µA
(
R
0.1
0.01
Reverse current I
0.001
0.000 1
−40 0 40 80 120 160 200
Between pins 1 and 5, 1 and 6
VR = 75 V
Ambient temperature Ta (°C
2
IR T
a
35 V
1 V
)
100
10
)
µA
(
R
1
0.1
Reverse current I
0.01
0.001
–40 0 40 80 120 160 200
Between pins 2 and 4, 3 and 4
Ambient temperature Ta (°C
a
VR = 75 V
35 V
1 V
6.0
5.0
)
pF
(
t
4.0
3.0
2.0
Terminal capacitance C
1.0
0
0 20406080100120
)
Ct V
R
f = 1 MHz
= 25°C
T
a
Between pins 2 and 4, 3 and 4
Between pins 1 and 5, 1 and 6
Reverse voltage VR (V
)
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