Panasonic MA6X125, MA125 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6X125 (MA125)
Silicon epitaxial planar type
For switching circuit
■ Features
• Four isolated elements contained in one package, allowing highdensity mounting
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current
Peak forward current
*
*
Junction temperature T
Storage temperature T
Note)*: Value for single diode
R
RM
I
F
I
FM
j
stg
40 V
40 V
100 mA
200 mA
150 °C
−55 to +150 °C
+0.20
2.90
10˚
0.30
0.50
(0.95)
+0.10
–0.05
+0.10
–0.05
1.9
–0.05
±0.1
(0.95)
654
+0.2
+0.25
–0.05
1.50
132
(0.65)
–0.3
2.8
+0.10
0.16
–0.06
5˚
1: Cathode 1
2: Anode 2
Unit: mm
+0.3
1.1
–0.1
3: Cathode 3
Anode 4
4: Anode 3
+0.2
–0.1
1.1
5: Cathode 4
0 to 0.1
6: Anode 1
Cathode 2
EIAJ: SC-74 Mini6-G1 Package
Marking Symbol: M2I
Internal Connection
654
±0.2
0.4
■ Electrical Characteristics Ta = 25°C ± 3°C
123
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance C
3
Reverse recovery time
*
t
rr1
t
rr2
F
R
R
IF = 100 mA 1.2 V
IR = 100 µA40V
VR = 40 V 100 nA
VR = 0 V, f = 1 MHz 5.0 pF
t
1
*
IF = 10 mA, VR = 6 V 150 ns
2
*
Irr = 0.1 IR , RL = 100 Ω 9
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*1: Between pins 1 and 6, Between pins 3 and 5
2: Between pins 2 and 6, Between pins 3 and 4
*
3: t
measurement circuit
*
rr
Pulse Generator
(PG-10N)
R
s
Bias Application Unit (N-50BU)
A
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
I
= 10 mA
F
V
R
R
L
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
I
F
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004 SKF00055BED
1
MA6X125
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Between pins 2 and 6, 3 and 4
C
= 150°
T
a
C
100°
C
25°
C
−20°
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR V
10
1
)
nA
(
R
−1
10
−2
10
Reverse current I
−3
10
R
T
= 100°C
a
25°C
IF V
VF T
F
a
IF = 100 mA
10 mA
)
3 mA
10
1
)
µA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
0 102030405060
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
)
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
Between pins 1 and 6, 3 and 5
C
= 150°
T
a
C
100°
C
25°
C
−20°
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
Between pins 2 and 6, 3 and 4
IR V
R
= 100°
T
a
25°
Between pins 2 and 6, 3 and 4
Reverse voltage VR (V
VF T
a
Between pins 1 and 6, 3 and 5
IF = 100 mA
C
C
)
10 mA
3 mA
−4
10
Between pins 1 and 6, 3 and 5
0 102030405060
Reverse voltage VR (V
IR T
10
1
)
nA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
–40 0 40 80 120 160 200
V
a
= 40 V
R
6 V
1 V
Between pins 2 and 6, 3 and 4
Ambient temperature Ta (°
2
0
)
C)
–40 0 40 80 120 160 200
Ambient temperature Ta
IR T
10
1
)
nA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
−40 0 40 80 120 160 200
VR = 40 V
a
6 V
1 V
Between pins 1 and 6, 3 and 5
Ambient temperature Ta (°
(°C)
C)
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°
Ct V
6.0
5.0
)
pF
(
t
4.0
3.0
2.0
Terminal capacitance C
1.0
Between pins 1 and 6, 3 and 5
Between pins 2 and 6, 3 and 4
0
0102030405060
R
f = 1 MHz
T
a
Reverse voltage VR (V
= 25°
)
C)
C
SKF00055BED
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