
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6X125 (MA125)
Silicon epitaxial planar type
For switching circuit
■ Features
• Four isolated elements contained in one package, allowing highdensity mounting
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current
Peak forward current
*
*
Junction temperature T
Storage temperature T
Note)*: Value for single diode
R
RM
I
F
I
FM
j
stg
40 V
40 V
100 mA
200 mA
150 °C
−55 to +150 °C
+0.20
2.90
10˚
0.30
0.50
(0.95)
+0.10
–0.05
+0.10
–0.05
1.9
–0.05
±0.1
(0.95)
654
+0.2
+0.25
–0.05
1.50
132
(0.65)
–0.3
2.8
+0.10
0.16
–0.06
5˚
1: Cathode 1
2: Anode 2
Unit: mm
+0.3
1.1
–0.1
3: Cathode 3
Anode 4
4: Anode 3
+0.2
–0.1
1.1
5: Cathode 4
0 to 0.1
6: Anode 1
Cathode 2
EIAJ: SC-74 Mini6-G1 Package
Marking Symbol: M2I
Internal Connection
654
±0.2
0.4
■ Electrical Characteristics Ta = 25°C ± 3°C
123
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
Terminal capacitance C
3
Reverse recovery time
*
t
rr1
t
rr2
F
R
R
IF = 100 mA 1.2 V
IR = 100 µA40V
VR = 40 V 100 nA
VR = 0 V, f = 1 MHz 5.0 pF
t
1
*
IF = 10 mA, VR = 6 V 150 ns
2
*
Irr = 0.1 IR , RL = 100 Ω 9
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*1: Between pins 1 and 6, Between pins 3 and 5
2: Between pins 2 and 6, Between pins 3 and 4
*
3: t
measurement circuit
*
rr
Pulse Generator
(PG-10N)
R
s
Bias Application Unit (N-50BU)
A
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
I
= 10 mA
F
V
R
R
L
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
I
F
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2004 SKF00055BED
1

MA6X125
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
Between pins 2 and 6, 3 and 4
C
= 150°
T
a
C
100°
C
25°
C
−20°
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR V
10
1
)
nA
(
R
−1
10
−2
10
Reverse current I
−3
10
R
T
= 100°C
a
25°C
IF V
VF T
F
a
IF = 100 mA
10 mA
)
3 mA
10
1
)
µA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
0 102030405060
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
)
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
Between pins 1 and 6, 3 and 5
C
= 150°
T
a
C
100°
C
25°
C
−20°
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
Between pins 2 and 6, 3 and 4
IR V
R
= 100°
T
a
25°
Between pins 2 and 6, 3 and 4
Reverse voltage VR (V
VF T
a
Between pins 1 and 6, 3 and 5
IF = 100 mA
C
C
)
10 mA
3 mA
−4
10
Between pins 1 and 6, 3 and 5
0 102030405060
Reverse voltage VR (V
IR T
10
1
)
nA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
–40 0 40 80 120 160 200
V
a
= 40 V
R
6 V
1 V
Between pins 2 and 6, 3 and 4
Ambient temperature Ta (°
2
0
)
C)
–40 0 40 80 120 160 200
Ambient temperature Ta
IR T
10
1
)
nA
(
R
−1
10
−2
10
Reverse current I
−3
10
−4
10
−40 0 40 80 120 160 200
VR = 40 V
a
6 V
1 V
Between pins 1 and 6, 3 and 5
Ambient temperature Ta (°
(°C)
C)
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°
Ct V
6.0
5.0
)
pF
(
t
4.0
3.0
2.0
Terminal capacitance C
1.0
Between pins 1 and 6, 3 and 5
Between pins 2 and 6, 3 and 4
0
0102030405060
R
f = 1 MHz
T
a
Reverse voltage VR (V
= 25°
)
C)
C
SKF00055BED

I
This product complies with the RoHS Directive (EU 2002/95/EC).
F(surge)
Between pins 1 and 6, 3 and 5
Between pins 2 and 6, 3 and 4
)
A
(
F(surge)
3
10
2
10
10
1
Forward surge current I
−1
10
−1
Pulse width tW (ms
t
W
°C
= 25
T
a
I
F(surge)
t
W
Non repetitive
10110
)
MA6X125
SKF00055BED
3

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semiconductors described in this book
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company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
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Consult our sales staff in advance for information on the following applications:
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Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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