Panasonic MA6X125 Datasheet
Switching Diodes
MA6X125
Silicon epitaxial planar type
For switching circuits
■ Features
•
Four-element contained in one package, allowing high-density
mounting
1
2
3
+ 0.1
− 0.05
+ 0.1
0.3
Unit : mm
− 0.05
0.5
+ 0.2
2.8
− 0.3
+ 0.25
1.5
0.65 ± 0.15 0.65 ± 0.15
6
− 0.05
+ 0.2
2.9
1.9 ± 0.2
0.95 0.95
− 0.05
5
4
1.45 ± 0.1
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
Forward current (DC)
Peak forward current
*
*
Junction temperature T
Storage temperature T
R
RM
I
F
I
FM
j
stg
100 mA
200 mA
150 °C
−55 to +150 °C
Note) *1: Value for single diode
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
3
Reverse recovery time
*
Note) 1. Rated input/output frequency: 100 MHz
2. *1: Between pins 1 and 6, Between pins 3 and 5
*2: Between pins 2 and 6, Between pins 3 and 4
*3:trr measuring circuit
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
R
F
R
t
1
*
t
rr1
2
*
t
rr2
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
− 0.06
+ 0.1
0.16
0 to 0.1
40 V
40 V
− 0.1
+ 0.2
1.1
0.1 to 0.3
0.4 ± 0.2
0.8
1 : Cathode 1 4 : Anode 3
2 : Anode 2 5 : Cathode 4
3 : Cathode 3 6 : Anode 1
Anode 4 Cathode 2
Mini Type Package (6-pin)
Marking Symbol: M2I
Internal Connection
6
5
4
VR = 40 V 100 nA
IF = 100 mA 1.2 V
IR = 100 µA40V
VR = 0 V, f = 1 MHz 5 pF
IF = 10 mA, VR = 6 V 150 ns
Irr = 0.1 · IR, RL = 100 Ω 90
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
I
= 0.1 · I
rr
1
2
3
t
R
1
MA6X125
Switching Diodes
IF V
1 000
100
)
mA
(
F
10
1
Forward current I
0.1
0.01
Between pins 2 and 6, 3 and 4
C
T
= 150°
a
C
100°
C
25°
C
− 20°
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR V
10
1
)
nA
(
R
0.1
0.01
Reverse current I
0.001
0.000 1
0 102030405060
Between pins 1 and 6, 3 and 5
R
Ta = 100°C
25°C
Reverse voltage VR (V
IF V
VF T
F
)
a
IF = 100 mA
10 mA
3 mA
)
1 000
100
)
mA
(
F
10
1
Forward current I
0.1
0.01
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
–40 0 40 80 120 160 200
)
Between pins 1 and 6, 3 and 5
C
Ta = 150°
C
100°
C
25°
C
− 20°
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
Between pins 2 and 6, 3 and 4
Ambient temperature Ta (°C
10
1
)
nA
(
R
0.1
0.01
Reverse current I
0.001
0.000 1
0 102030405060
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
IR V
R
C
Ta = 100°
C
25°
Between pins 2 and 6, 3 and 4
Reverse voltage VR (V
VF T
Between pins 1 and 6, 3 and 5
a
IF = 100 mA
10 mA
3 mA
Ambient temperature Ta (°C
)
)
10
1
)
nA
(
R
0.1
0.01
Reverse current I
0.001
0.000 1
–40 0 40 80 120 160 200
Between pins 2 and 6, 3 and 4
VR = 40 V
6 V
1 V
Ambient temperature Ta (°C
2
IR T
IR T
6 V
1 V
a
6.0
5.0
)
pF
(
t
4.0
3.0
2.0
Terminal capacitance C
1.0
0
0 102030405060
)
a
)
10
1
)
nA
(
R
0.1
0.01
Reverse current I
0.001
0.000 1
−40 0 40 80 120 160 200
Between pins 1 and 6, 3 and 5
VR = 40 V
Ambient temperature Ta (°C
Ct V
R
f = 1 MHz
T
a
Between pins 1 and 6, 3 and 5
Between pins 2 and 6, 3 and 4
Reverse voltage VR (V
= 25°C
)
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