Panasonic MA6X122 Datasheet
Switching Diodes
2.8
+ 0.2
− 0.3
1.5
+ 0.25
− 0.05
0.65 ± 0.15 0.65 ± 0.15
1
6
5
4
3
2
1.45
0.95 0.95
1.9 ± 0.2
0.3
+ 0.1
− 0.05
2.9
+ 0.2
− 0.05
1.1
+ 0.2
− 0.1
0.8
0.4 ± 0.2
0 to 0.1
0.16
+ 0.1
− 0.06
0.1 to 0.3
MA6X122
Silicon epitaxial planar type
For switching circuit
■ Features
•
Four-element contained in one package, allowing high-density
mounting
•
Centrosymmetrical wiring, allowing to free from the taping direction
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Peak reverse voltage V
1
Average forward current
Peak forward current
*
1
*
Non-repetitive peak forward I
1,2
surge current
*
Junction temperature T
Storage temperature T
Note) *1: Value for single diode
*2:t = 1 s
I
FSM
I
FM
R
RM
F
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
1 : Cathode 1 4 : Cathode 3
2 : Cathode 2 5 : Cathode 4
3 : Anode 3,4 6 : Anode 1,2
Mini Type Package (6-pin)
Marking Symbol: M2A
Internal Connection
6
5
4
Unit : mm
1
2
3
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
Reverse voltage (DC) V
Terminal capacitance C
Reverse recovery time
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
*
Pulse Generator
(PG-10N)
= 50 Ω
R
s
R
F
R
t
t
rr
Bias Application Unit N-50BU
A
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 75 V 100 nA
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 0 V, f = 1 MHz 15 pF
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 · IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
rr
Irr = 0.1 · I
t
R
I
F
1
MA6X122
Switching Diodes
IF V
F
3
10
2
10
)
Ta = 150°C
mA
(
100°C
F
10
25°C
− 20°C
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
IR T
a
10
VR = 75 V
1
)
µA
(
−1
10
R
−2
10
−3
10
35 V
1 V
Reverse current I
−4
10
−5
10
−40 0 40 80 120 160 200 240
Ambient temperature Ta (°C
IR V
R
10
Ta = 150°C
1
)
µA
(
−1
10
R
−2
10
−3
10
100°C
25°C
Reverse current I
−4
10
−5
10
)
)
0 14020 1206040 10080
Reverse voltage VR (V
Ct V
R
6
5
)
pF
(
t
4
3
2
Terminal capacitance C
1
0
0 20 40 60 80 100 120
Reverse voltage VR (V
)
f = 1 MHz
= 25°C
T
a
)
1.6
1.4
)
1.2
V
(
F
1.0
0.8
0.6
0.4
Forward voltage V
0.2
0
−40 0 40 80 120 160 200
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03
VF T
a
IF = 100 mA
10 mA
Ambient temperature Ta (°C
I
t
F(surge)
0.3 3 301010.1
Pulse width tW (ms
W
Ta = 25°C
I
F(surge)
t
W
Non repetitive
)
3 mA
)
2
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