Panasonic MA6X078 Datasheet

Band Switching Diodes

2.8

+ 0.2

− 0.3

1.5

+ 0.25

− 0.05

0.65 ± 0.15 0.65 ± 0.15

1

6

5

4

3

2

1.45 ± 0.1

0.95 0.95

1.9 ± 0.2

0.3

+ 0.1

− 0.05

0.5

+ 0.1

− 0.05

2.9

+ 0.2

− 0.05

1.1

+ 0.2

− 0.1

0.8

0.4 ± 0.2

0 to 0.1

0.16

+ 0.1

− 0.06

0.1 to 0.3

MA6X078

Silicon epitaxial planar type

For band switching

■ Features

•

Non connected three elements incorporated in one package

•

Low forward dynamic resistance r

•

Less voltage dependence of diode capacitance C

•

Mini type package, allowing downsizing of equipment and
automatic insertion through the taping package

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage (DC) V

Forward current (DC) I

Operating ambient temperature*T

Storage temperature T

Note) * : Maximum ambient temperature during operation

f

R

F

−25 to +85 °C

opr

−55 to +150 °C

stg

D

35 V

100 mA

1 : Cathode 1
2 : Cathode 2
3 : Cathode 3

Mini Type Package (6-pin)

Marking Symbol: M2L

Internal Connection

Unit : mm

4 : Anode 3
5 : Anode 2
6 : Anode 1

■ Electrical Characteristics Ta = 25°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current (DC) I

Forward voltage (DC) V

Diode capacitance C

Forward dynamic resistance

Note) 1．Each characteristic is a standard for individual diodes

2．Rated input/output frequency: 100 MHz

  3．*: rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER

6

5

4

R

*

r

f

VR = 33 V 0.01 100 nA

IF = 100 mA 0.92 1 V

F

VR = 6 V, f = 1 MHz 0.9 1.2 pF

D

IF = 2 mA, f = 100 MHz 0.65 0.85 Ω

1

2

3

1

MA6X078

Band Switching Diodes

IF  V

3

10

)

2

10

mA
(

F

10

1

Forward current I

−1

10

0 0.2 0.4 0.6 0.8 1.0

F

Forward voltage VF (V

 I

rf

1.0

)

Ω

(

0.8

f

0.6

F

Ta = 25°C

)

f = 100 MHz

= 25°C

T

a

10

CD  V

5

)
pF

3

(

D

2

1

0.5

0.3

Diode capacitance C

0.2

0.1
0 8 16 24 324 1220283640

R

f = 1 MHz

= 25°C

T

a

Reverse voltage VR (V

rf  f

1.0

)

Ω

(

0.8

f

0.6

IF = 2 mA

= 25°C

T

a

IR  T

2

10

)

10

nA
(

R

1

−1

10

Reverse current I

–2

10

)

0 40 80 120 16020 60 100 140

Ambient temperature Ta (°C

a

VR = 33 V

)

0.4

0.2

Forward dynamic resistance r

0

1103 30 100

Forward current IF (mA

0.4

0.2

Forward dynamic resistance r

0

)

10 10030 300 1 000

Frequency f (MHz

)

2