Panasonic MA4ZD14 Datasheet
Schottky Barrier Diodes (SBD)
MA4ZD14
Silicon epitaxial planar type
For high-speed switching circuits
2.1 ± 0.1
Unit : mm
1.25 ± 0.1
■ Features
•
S-mini type 4-pin package
•
Low forward rise voltage V
•
Allowing high-density mounting
F
(VF < 0.4 V)
1
2.0 ± 0.1
1.3 ± 0.1
23
4
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Forward current Single I
1
(DC) Double
*
Peak forward Single I
1
current Double
Non-repetitive peak
2
forward surge current
*
*
Single I
1
*
Double
Junction temperature T
Storage temperature T
R
V
RRM
F
FM
FSM
j
−55 to +125 °C
stg
Note) *1: Value per chip
*2: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
20 V
20 V
100 mA
75
300 mA
225
1A
0.75
125 °C
0.11 ± 0.01
S-Mini Type Package (4-pin)
Marking Symbol: M5D
Internal Connection
1
2
0.3 ± 0.05
0.7 ± 0.1
1 : Anode 1
2 : Anode 2
3 : Cathode 2
4 : Cathode 1
4
3
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
Forward voltage (DC) V
R
F1
V
F2
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 250 MHz
3. * : trr measuring instrument
Bias Application Unit N-50BU
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
VR = 10 V 20 µA
IF = 5 mA 0.27 V
IF = 100 mA 0.40 V
VR = 0 V, f = 1 MHz 25 pF
t
IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
t
rr
I
= 10 mA
rr
t
1
MA4ZD14
Schottky Barrier Diodes (SBD)
IF V
1
−1
10
Ta = 125°C
)
A
(
−2
10
F
−3
10
−4
10
F
75°C
25°C
− 20°C
Forward current I
−5
10
−6
10
0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V
IR V
−1
10
−2
10
)
A
(
R
−3
10
−4
10
Reverse current I
−5
10
−6
10
)
Ta = 125°C
0 5 10 15 20 25 30
Reverse voltage VR (V
R
75°C
25°C
)
2
Loading...