Panasonic MA4Z713 User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Schottky Barrier Diodes (SBD)

MA4Z713 (MA4S713)

Silicon epitaxial planar type

For switching

For wave detection

■ Features

•

Two isolated elements are contained in one package, allowing
high-density mounting

•

Forward voltage V

•

Optimum for high frequency rectification because of its short
reverse recovery time (t

, optimum for low voltage rectification

F

)

rr

■ Package

•

Code
SMini4-F1

•

Pin Name

1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1

■ Marking Symbol: M1N

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Maximum peak reverse voltage

Peak forward Single I

current Double

*

Forward current Single I

*

Double

Junction temperature T

Storage temperature T

R

V

RM

FM

  110

F

  20

j

−55 to +125 °C

stg

Note)*: Value of each diode in double diodes used.

30 V

30 V

150 mA

30 mA

125 °C

■ Internal Connection

3

4

2

1

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Reverse current I

Forward voltage V

R

F1

V

F2

Terminal capacitance C

Reverse recovery time

*

t

rr

Detection efficiency η Vin = 3 V

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.

  3. Absolute frequency of input and output is 2 GHz. 4.

Bias Application Unit N-50BU

A

Pulse Generator
(PG-10N)
R

= 50 Ω

s

Wave Form Analyzer
(SAS-8130)

= 50 Ω

R

i

VR = 30 V 1 µA

IF = 1 mA 0.4 V

IF = 30 mA 1.0

VR = 1 V, f = 1 MHz 1.5 pF

t

IF = IR = 10 mA 1.0 ns

Irr = 1 mA, RL = 100 Ω

, f = 30 MHz 65 %

(peak)

RL = 3.9 kΩ, CL = 10 pF

: trr measurement circuit

*

Input Pulse Output Pulse

t

t

p

r

10%

V

R

t
t
δ = 0.05

90%

= 2 µs

p

= 0.35 ns

r

t

t

rr

I

F

I

F

I

R

R

L

= 10 mA
= 10 mA

= 100 Ω

I

rr

= 1 mA

t

Note) The part number in the parenthesis shows conventional part number.

Publication date: February 2008 SKH00109CED

1

MA4Z713

3

10

I

F

This product complies with the RoHS Directive (EU 2002/95/EC).

 V

F

3

10

IR  V

R

VF  T

1.6

a

2

10

)

mA
(

F

10

1

Forward curremt I

−1

10

−2

10

T

a

0 0.4 0.8 1.2

75°C 25°C

= 125°C

Forward voltage VF (V

IR  T

3

10

2

10

)

µA

(

R

10

1

Reverse current I

−1

10

a

V

R

= 30 V

10 V
1 V

−20°C

)

2

10

)
µA

(

R

10

1

Reverse current I

−1

10

−2

10

0 5 10 15 20 25 30

Reverse voltage VR (V

Ct  V

3.0

)
pF

(

t

2.0

1.0

Terminal capacitance C

= 125°C

T

a

75°C

25°C

)

R

)

1.2

V
(

F

0.8

Forward voltage V

0.4

0

−40 0 40 80 120 160 200

= 30 mA

I

F

Ambient temperature Ta (°C

I

 t

10

)
A

(

10

F(surge)

3

2

10

1

F(surge)

W

T

3 mA

1 mA

= 25°C

a

t

W

I

F(surge)

)

Forward surge current I

−2

10

−40 0 40 80 120 160 200

Ambient temperature Ta (°C

2

0

0102030

)

Reverse voltage VR (V

)

−1

10

−1

10

110

Pulse width tW (ms

)

SKH00109CED