Panasonic MA4Z159 User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Switching Diodes
MA4Z159 (MA4S159)
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing highdensity mounting
• Flat lead type, resulting in improved mounting efficiency and
solderability with the high-speed mounting machine
• Short reverse recovery time t
• Small terminal capacitance C
rr
t
■ Package
•
Code
SMini4-F1
•
Pin Name
1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1
■ Marking Symbol: M1B
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
Forward current
Single I
Double 75
Peak forward
current
Non-repetitive peak
forward surge current
Single I
Double 170
Single I
*
Double 375
Junction temperature T
Storage temperature T
Note)*: t = 1 s
V
R
RM
F
FM
FSM
j
−55 to +150 °C
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
■ Internal Connection
3
4
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
= 50 Ω
R
i
IF = 100 mA 0.95 1.20 V
IR = 100 µA80V
VR = 75 V 0.1 µA
VR = 0 V, f = 1 MHz 0.9 2.0 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
= 10 mA
I
F
= 6 V
V
R
= 100 Ω
R
L
t
rr
= 0.1 I
I
rr
t
R
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2008 SKF00049CED
1
MA4Z159
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
Ta = 150°C
mA
(
Forward current I
100°C
F
10
10
25°C
10
− 20°C
1
−1
−2
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage V
IR T
a
VR = 75 V
)
nA
(
5
10
4
10
R
3
10
2
10
Reverse current I
10
IR V
Ct V
R
Ta = 150°C
100°C
25°C
R
R
f = 1 MHz
T
(V)
= 25°C
a
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
3
10
)
A
(
2
10
F(surge)
10
1
Forward surge current I
5
10
4
10
)
nA
(
R
3
10
2
10
Reverse current I
10
1
(V)
F
35 V
6 V
0 20406080100120
Reverse voltage V
1.2
1.0
)
pF
(
t
0.8
0.6
0.4
Terminal capacitance C
0.2
VF T
a
IF = 100 mA
Ambient temperature T
I
t
F(surge)
W
Ta = 25°C
Non repetitive
t
W
10 mA
(°C)
a
I
F(surge)
3 mA
1
−40 0 40 80 120 160 200
Ambient temperature T
2
−1
0
(°C)
a
0 20406080100120
Reverse voltage V
(V)
R
10
−1
Pulse width tW (ms
10110
)
SKF00049CED
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