Panasonic MA4X862 Datasheet
Band Switching Diodes
MA4X862
Silicon epitaxial planar type
For band switching
+ 0.2
2.8
− 0.3
+ 0.25
0.65 ± 0.15 0.65 ± 0.15
1.5
− 0.05
Unit : mm
■ Features
•
Two electrically isolated elements incorporated
•
Small diode capacitance C
•
Low forward dynamic resistance r
•
Optimum for a band switching of a tuner
D
f
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Forward current Single I
R
F
35 V
100 mA
(DC) Double 75 mA/Unit
Operating ambient temperature
Storage temperature T
T
−25 to +85 °C
opr
−55 to +100 °C
stg
Marking Symbol: M1I
Internal Connection
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Diode capacitance C
Forward dynamic resistance r
f1
r
f2
Note) 1．Rated input/output frequency: 100 MHz
2．*1:rf measuring instrument: Nihon Koshuha Model TDC-121A
*2:rf measuring instrument: YHP 4191A RF IMPEDANCE ANALYZER
VR = 33 V 100 nA
IF = 100 mA 1.0 V
F
VR = 6 V, f = 1 MHz 1.2 pF
D
1
*
IF = 2 mA, f = 100 MHz 0.65 Ω
2
*
+ 0.2
− 0.05
2.9
1.9 ± 0.2
+ 0.2
− 0.1
1.1
0.1 to 0.3
0.4 ± 0.2
4
0.950.95
3
0.8
Mini Type Package (4-pin)
4
3
0.5 R
0.5
+ 0.1
− 0.05
0.4
1 : Cathode 1
0 to 0.1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
1
2
0.98 Ω
+ 0.1
− 0.05
1
1.45
0.4
2
+ 0.1
− 0
0.2
0.6
+ 0.1
− 0.06
0.16
1
MA4X862
Band Switching Diodes
IF VF (Between 1 − 4)
2
10
12
43
10
)
mA
(
F
1
−1
10
Forward current I
10
10
Ta = 85°C
−2
−3
0 0.2 0.4 0.6 0.8 1.0 1.2
50°C 25°C
Forward voltage VF (V
100
30
)
10
pA
(
R
3
1
12
43
− 20°C
Ta = 25°C
VF (Between 2 − 3)
I
F
100
12
30
43
)
10
mA
(
F
3
1
0.3
0.1
Forward current I
0.03
0.01
0 0.2 0.4 0.6 1.00.8 1.2
)
Ta = 85°C
50°C
− 20°C
Forward voltage VF (V
25°C
)
rf fIR VR (Between 2 − 3)
12
)
10
Ω
(
f
8
6
IF = 2 mA
= 25°C
T
a
Tester: YHP4191A
r
f
IR VR (Between 1 − 4)
100
30
)
10
pA
(
R
3
1
0.3
0.1
Reverse current I
0.03
0.01
0 102030405060
Reverse voltage VR (V
r
8
)
Ω
(
f
6
4
f
Ta = 25°C
12
43
f
IF = 2 mA
= 25°C
T
a
Tester: TDC-121A
r
f
)
0.3
0.1
Reverse current I
0.03
0.01
0 102030405060
Reverse voltage VR (V
I
rf
2.4
)
2.0
Ω
(
f
1.6
1.2
0.8
0.4
Forward dynamic resistance r
0
0.1
F
f = 1 000 MHz
= 25°C
T
a
Tester: TDC-121A
r
f
1100.3 3 30 100
Forward current IF (mA
4
2
2
Forward dynamic resistance r
0
)
)
1103 30 100502052
Frequency f (MHz
rf I
3.2
2.8
)
Ω
(
f
2.4
2.0
1.6
1.2
0.8
Forward dynamic resistance r
0.4
0
0.1
Forward current IF (mA
f = 1 000 MHz
= 25°C
T
a
Tester: YHP4191A
r
f
1 10 1000.3 3 30
)
F
)
Forward dynamic resistance r
0
1103 30 100
Frequency f (MHz
CD V
1.6
1.4
)
1.2
pF
(
D
1.0
0.8
0.6
0.4
Diode capacitance C
0.2
0
01020304050
R
f = 1 MHz
T
)
= 25°C
a
Reverse voltage VR (V
)
2
Loading...