Panasonic MA4X796 Datasheet
Schottky Barrier Diodes (SBD)
MA4X796
Silicon epitaxial planar type
Unit : mm
+ 0.2
2.8
For super-high speed switching circuit
For small current rectification
■ Features
•
Two MA3X787s in the same direction are contained in one package
•
Allowing to rectify under (I
•
Optimum for high-frequency rectification because of its short
reverse recovery time (t
•
•
(forward rise voltage), with high rectification efficiency
Low V
F
Reverse voltage V
rr
(DC value) = 50 V guaranteed
R
= 100 mA) condition
F(AV)
)
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage (DC) V
Repetitive peak reverse voltage
Peak forward
current
Average forward
current
Single I
2
*
Double
200
Single I
2
*
Double
70
Non-repetitive peak forward I
1
surge current
*
Junction temperature T
Storage temperature T
V
F(AV)
R
RRM
FM
FSM
j
stg
Note) *1: The peak-to-peak value in one cycle of 50 Hz sine-wave
(non-repetitive)
*2: Value per chip
50 V
50 V
300 mA
100 mA
1A
125 °C
−55 to +125 °C
Marking Symbol: M4B
Internal Connection
0.950.95
+ 0.2
− 0.05
2.9
1.9 ± 0.2
+ 0.2
− 0.1
0.8
1.1
0.1 to 0.3
0.4 ± 0.2
■ Electrical Characteristics Ta = 25°C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current (DC) I
R
Forward voltage (DC) V
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 200 MHz
3. * : trr measuring circuit
Pulse Generator
(PG-10N)
R
Bias Application Unit N-50BU
A
= 50 Ω
s
VR = 50 V 30 µA
IF = 100 mA 0.55 V
F
VR = 0 V, f = 1 MHz 25 pF
t
IF = IR = 100 mA 3 ns
Irr = 10 mA, RL = 100 Ω
Input Pulse Output Pulse
t
t
p
W.F.Analyzer
(SAS-8130)
= 50 Ω
R
i
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
− 0.3
+ 0.25
1.5
− 0.050.65 ± 0.15 0.65 ± 0.15
0.5 R
4
3
+ 0.1
− 0.05
0.4
0 to 0.1
Mini Type Package (4-pin)
4
3
t
rr
t
I
= 10 mA
rr
= 100 mA
I
F
= 100 mA
I
R
= 100 Ω
R
L
+ 0.1
1
0.5
2
0.2
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
1
2
− 0.05
1.45
0.4
+ 0.1
− 0
0.6
+ 0.1
− 0.06
0.16
1
MA4X796
Schottky Barrier Diodes (SBD)
IF V
3
10
2
10
)
A
(
Ta = 125°C
F
10
1
Forward current I
−1
10
−2
10
0 0.1 0.2 0.3 0.4 0.5 0.6
F
− 20°C
75°C
25°C
Forward voltage VF (V
IR T
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
−40 0 40 80 120 160 200
a
VR = 50 V
30 V
10 V
Ambient temperature Ta (°C
VF T
Ct V
a
IF = 100 mA
10 mA
3 mA
)
R
)
0.8
0.7
)
0.6
V
(
F
0.5
0.4
0.3
0.2
Forward voltage V
0.1
0
)
)
−40 0 40 80 120 160 200
Ambient temperature Ta (˚C
60
50
)
pF
(
t
40
30
20
Terminal capacitance C
10
0
0 102030405060
Reverse voltage VR (V
4
10
3
10
)
µA
(
R
2
10
10
Reverse current I
1
−1
10
0 102030405060
1 000
300
)
A
(
100
F(surge)
30
10
3
1
Forward surge current I
0.3
0.1
0.03 30
IR V
R
Ta = 125°C
Reverse voltage VR (V
I
t
F(surge)
0.1 1 1030.3
W
Ta = 25°C
t
W
Pulse width tW (ms
I
)
75°C
25°C
)
F(surge)
2
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