Panasonic MA4X746, MA746 User Manual

Schottky Barrier Diodes (SBD)

This product complies with the RoHS Directive (EU 2002/95/EC).

MA4X746 (MA746)

Silicon epitaxial planar type

For super high speed switching
For small current rectification

■ Features

• Two isolated elements are contained in one package, allowing
high-density mounting

• Forward current (Average) I
V

< 50 V are achieved

R

= 200 mA and Reverse voltage

F(AV)

• Optimum for high frequency rectification because of its short
reverse recovery time t

rr

• Low forward voltage VF and good rectification efficiency

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Reverse voltage V

Repetitive peak reverse voltage V

Non-repetitive peak

forward surge current

Peak forward

current

Forward current

(Average)

Single I

*

Double

Single I

*

Double

Single I

*

Double

Junction temperature T

Storage temperature T

R

RRM

FSM

FM

F(AV)

j

stg

Note)*: Value of each diode in double diodes used.

50 V

50 V

1A

0.75

300 mA

225

200 mA

150

125 °C

−55 to +125 °C

+0.2

+0.3

0.16

–0.3

2.8

–0.1

1.1

Unit: mm

+0.1
–0.06

5˚

1 : Cathode 1

0.60

+0.02

2.90

–0.05

1.9

±0.2

(0.95)(0.95)

34

21

(0.2)

+0.10
–0.05

10˚

0.5R

+0.25

1.50

(0.65)

+0.2

–0.1

1.1

–0.05

2 : Cathode 2
3 : Anode 2

0 to 0.1

4 : Anode 1

EIAJ : SC-61 Mini4-G1 Package

Marking Symbol: M3M

Internal Connection

43

1

2

±0.2

0.4

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Forward voltage V

Reverse current I

Terminal capacitance C

Reverse recovery time

*

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body

and the leakage of current from the operating equipment.

3. Absolute frequency of input and output is 1 GHz.
measurement circuit

4.*:t

rr

Publication date: April 2004 SKH00107BED

Bias Application Unit (N-50BU)

Pulse Generator
(PG-10N)

= 50 Ω

R

s

F1

V

F2

R

t

rr

A

t

Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω

IF = 30 mA 0.36 V

IF = 200 mA 0.55

VR = 50 V 200 µA

VR = 0 V, f = 1 MHz 30 pF

IF = IR = 100 mA 3.0 ns
Irr = 10 mA, RL = 100 Ω

Input Pulse Output Pulse

t

t

p

r

10%

V

R

t
t
δ = 0.05

Note) The part number in the parenthesis shows conventional part number.

90%

= 2 µs

p

= 0.35 ns

r

t

I

F

I

= 100 mA

F

= 100 mA

I

R

= 100 Ω

R

L

t

rr

I

= 10 mA

rr

t

1

MA4X746

This product complies with the RoHS Directive (EU 2002/95/EC).

IF  V

3

10

2

10

Ta = 150°C

)

mA

(

F

10

1

Forward current I

−1

10

−2

10

0 0.1 0.2 0.3 0.4 0.5 0.6

F

100°C

25°C

Forward voltage VF (V

IR  T

5

10

4

10

)
µA

(

R

3

10

VR = 30 V

2

10

a

5 V

Reverse current I

10

−20°C

IR  V

100°C

Ct  V

R

R

25°C

)

f = 1 MHz

= 25°C

T

a

0.5

0.4

)
V

(

F

0.3

0.2

Forward voltage V

0.1

0

−40 0 40 80 120 160 200

5

10

Ta = 150°C

4

10

)
µA

(

R

3

10

2

10

Reverse current I

10

1

)

0 102030405060

Reverse voltage VR (V

30

25

)
pF

(

t

20

15

10

Terminal capacitance C

5

VF  T

a

IF = 200 mA

Ambient temperature Ta

100 mA

30 mA

(°C)

1

−40 0 40 80 120 160 200

Ambient temperature Ta

2

(°C)

0

0 102030405060

Reverse voltage VR (V

)

SKH00107BED